HMC717LP3

HMC717LP3 / 717LP3E v01.1008 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz Features Noise Figure: 1.1 dB Gain: 16.5 dB Output IP3: +31.5 dBm Single Supply: +3V to +5V 16 Lead 3x3mm QFN Package: 9 mm2 5 LOW NOISE AMPLIFIERS - SMT www.datasheet4u.com Typical Applications The HMC717LP3(E) is ideal for: Fixed Wireless and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Public Safety Radio Access Points Functional Diagram General Description The HMC717LP3(E) is a GaAs PHEMT MMIC Low Noise Amplifier that is ideal for fixed wireless and LTE/WiMAX/4G basestation front-end receivers operating between 4.8 and 6.0 GHz. The amplifier has been optimized to provide 1.1 dB noise figure, 16.5 dB gain and +31.5 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC717LP3(E) can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. Electrical Specifi cations TA = +25° C, Rbias = 2k Ohms for Vdd = 5V, Rbias = 20k Ohms for Vdd = 3V [1] [2] Vdd = +3V Parameter Min. Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Total Supply Current (Idd) [1] Rbias resistor sets current...