BU2708AF. 2708AF Datasheet

2708AF BU2708AF. Datasheet pdf. Equivalent

2708AF Datasheet
Recommendation 2708AF Datasheet
Part 2708AF
Description BU2708AF
Feature 2708AF; Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708AF GENERAL .
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NXP Semiconductors 2708AF
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2708AF
GENERAL DESCRIPTION
High voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontal
www.ddaetafslehecetito4nu.ccoimrcuits of colour television receivers. Features exceptional tolerance to base drive and collector current
load variations, resulting in a low worst-case dissipation. Designed to withstand VCES pulses up to 1700 V.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
ts
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time
CONDITIONS
VBE = 0 V
Ths 25 ˚C
IC = 4 A; IB = 1.33 A
f = 16 kHz
ICsat = 4 A; f = 16 kHz
TYP.
-
-
-
-
-
-
4
4.8
MAX.
1700
825
8
15
45
1.0
-
5.5
UNIT
V
V
A
A
W
V
A
µs
PINNING - SOT199
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
1 23
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
Ths 25 ˚C
ESD LIMITING VALUES
SYMBOL PARAMETER
CONDITIONS
VC Electrostatic discharge capacitor voltage Human body model (250 pF,
1.5 k)
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
1700
825
8
15
4
6
5
45
150
150
UNIT
V
V
A
A
A
A
A
W
˚C
˚C
MIN. MAX. UNIT
- 10 kV
1 Turn-off current.
September 1997
1
Rev 1.200



NXP Semiconductors 2708AF
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2708AF
THERMAL RESISTANCES
www.daStaYshMeeBt4Ou.Lcom PARAMETER
Rth j-hs
Junction to heatsink
Rth j-hs
Junction to heatsink
Rth j-a
Junction to ambient
CONDITIONS
without heatsink compound
with heatsink compound
in free air
TYP.
-
-
35
MAX.
3.7
2.8
-
UNIT
K/W
K/W
K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol Repetitive peak voltage from all R.H. 65 % ; clean and dustfree
three terminals to external
heatsink
Cisol Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
- 2500 V
- 22 - pF
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
ICES Collector cut-off current 2
ICES
IEBO
BVEBO
VCEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
VCEsat
VBEsat
hFE
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
CONDITIONS
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ˚C
VEB = 6 V; IC = 0 A
IB = 1 mA
IB = 0 A; IC = 100 mA;
L = 25 mH
IC = 4 A; IB = 1.33 A
IC = 4 A; IB = 1.33 A
IC = 100 mA; VCE = 5 V
IC = 4 A; VCE = 1 V
MIN.
-
-
-
7.5
825
-
0.83
-
3
TYP. MAX. UNIT
- 1.0 mA
- 2.0 mA
- 70
13.5 -
900 -
µA
V
V
- 1.0
0.91 1.00
21 -
6 7.3
V
V
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
Switching times (line deflection
circuit 16 kHz)
ts Turn-off storage time
tf Turn-off fall time
CONDITIONS
ICsat = 4 A; IB(end) = 0.8 A; -IBM = ICM/2;
LB = 6 µH; -VBB = 4 V; LC = 1 mH;
CFB = 12.2 nF
TYP. MAX. UNIT
4.8 5.5 µs
0.4 0.52 µs
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.200



NXP Semiconductors 2708AF
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2708AF
www.datasheet4u.com
+ 50v
100-200R
Horizontal
Oscilloscope
Vertical
6V
30-60 Hz
100R
1R
Fig.1. Test circuit for VCEOsust.
IC / mA
250
200
100
0
VCE / V
min
VCEOsust
Fig.2. Oscilloscope display for VCEOsust.
TRANSISTOR
IC DIODE
ICsat
t
IB
VCE
20us
26us
64us
IBend
t
t
Fig.3. Switching times waveforms.
ICsat
90 %
IC
ts
IB
IBend
10 %
tf
t
t
- IBM
Fig.4. Switching times definitions.
+ 150 v nominal
adjust for ICsat
Lc
IBend
-VBB
LB T.U.T.
Cfb
Fig.5. Switching times test circuit.
hFE
100
VCE = 5 V
BU2708AF
Ths = 25 C
Ths = 85 C
10
1
0.01 0.1 1 10
IC / A
Fig.6. DC current gain. hFE = f (IC)
Parameter Ths
(Low and high gain)
100
September 1997
3
Rev 1.200





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