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Silicon Transistor. 2SA1943 Datasheet |
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2SA1943/FJL4215
PNP Epitaxial Silicon Transistor
Applications
• High-Fidelity Audio Output Amplifier
• General Purpose Power Amplifier
Features
• High Current Capability: IC = -17A.
• High Power Dissipation : 150watts.
• High Frequency : 30MHz.
• High Voltage : VCEO= -250V
• Wide S.O.A for reliable operation.
• Excellent Gain Linearity for low THD.
• Complement to 2SC5200/FJL4315.
• Full thermal and electrical Spice models are available.
• Same transistor is also available in:
-- TO3P package, 2SA1962/FJA4213 : 130 watts
-- TO220 package, FJP1943 : 80 watts
-- TO220F package, FJPF1943 : 50 watts
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
Symbol
Parameter
BVCBO
BVCEO
BVEBO
IC
IB
PD
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Device Dissipation(TC=25°C)
Derate above 25°C
TJ, TSTG
Junction and Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics* Ta=25°C unless otherwise noted
Symbol
Parameter
RθJC
Thermal Resistance, Junction to Case
* Device mounted on minimum pad size
hFE Classification
Classification
hFE1
R
55 ~ 110
© 2009 Fairchild Semiconductor Corporation
2SA1943/FJL4215 Rev. C
1
January 2009
1 TO-264
1.Base 2.Collector 3.Emitter
Ratings
-250
-250
-5
-17
-1.5
150
1.04
- 50 ~ +150
Units
V
V
V
A
A
W
W/°C
°C
Max.
0.83
Units
°C/W
O
80 ~ 160
www.fairchildsemi.com
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Electrical Characteristics* Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
Collector-Base Breakdown Voltage
BVCEO
Collector-Emitter Breakdown Voltage
BVEBO
Emitter-Base Breakdown Voltage
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE1
DC Current Gain
hFE2
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(on)
Base-Emitter On Voltage
fT Current Gain Bandwidth Product
Cob Output Capacitance
* Pulse Test: Pulse Width=20µs, Duty Cycle≤2%
IC=-5mA, IE=0
IC=-10mA, RBE=∞
IE=-5mA, IC=0
VCB=-230V, IE=0
VEB=-5V, IC=0
VCE=-5V, IC=-1A
VCE=-5V, IC=-7A
IC=-8A, IB=-0.8A
VCE=-5V, IC=-7A
VCE=-5V, IC=-1A
VCB=-10V, f=1MHz
Min.
-250
-250
-5
55
35
Typ.
60
-0.4
-1.0
30
360
Max.
-5.0
-5.0
160
-3.0
-1.5
Units
V
V
V
µA
µA
V
V
MHz
pF
Ordering Information
Part Number
2SA1943RTU
2SA1943OTU
FJL4215RTU
FJL4215OTU
Marking
A1943R
A1943O
J4215R
J4215O
Package
TO-264
TO-264
TO-264
TO-264
Packing Method
TUBE
TUBE
TUBE
TUBE
Remarks
hFE1 R grade
hFE1 O grade
hFE1 R grade
hFE1 O grade
© 2009 Fairchild Semiconductor Corporation
2SA1943/FJL4215 Rev. C
2
www.fairchildsemi.com
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Typical Characteristics
-20
-18
IB = -1A
IB = -900mA
IB = -800mA
-16 IIBB==--650000mmAA IB = -700mA
-14 IB = -400mA
-12 IB = -300mA
-10 IB = -200mA
-8
IB = -100mA
-6
-4
-2
-0 -2 -4 -6 -8 -10
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Tj = 125oC
Tj = 25oC
100
Tj = -25oC
10
V = -5V
CE
1
0.1 1 10
I [A], COLLECTOR CURRENT
C
Figure 3. DC current Gain ( O Grade )
10000
Ic=-10Ib
1000
Tj=-25oC
Tj=25oC
Tj=125oC
100
0.1
1
Ic[A], COLLECTOR CURRENT
10
Figure 5. Base-Emitter Saturation Voltage
Tj = 125oC
Tj = 25oC
100
Tj = -25oC
10
V = -5V
CE
1
0.1 1 10
I [A], COLLECTOR CURRENT
C
Figure 2. DC current Gain ( R Grade )
10000
Ic=-10Ib
1000
Tj=25oC
Tj=125oC
100
Tj=-25oC
10
0.1 1 10
Ic[A], COLLECTOR CURRENT
Figure 4. Collector-Emitter Saturation Voltage
14
12
VCE = 5V
10
8
6
4
2
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
VBE[V], BASE-EMITTER VOLTAGE
Figure 6. Base-Emitter On Voltage
© 2009 Fairchild Semiconductor Corporation
2SA1943/FJL4215 Rev. C
3
www.fairchildsemi.com
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