PNP Silicon. LBC807-16LT1 Datasheet

LBC807-16LT1 Silicon. Datasheet pdf. Equivalent

LBC807-16LT1 Datasheet
Recommendation LBC807-16LT1 Datasheet
Part LBC807-16LT1
Description (LBC807-xxLT1) General Purpose Transistors PNP Silicon
Feature LBC807-16LT1; LESHAN RADIO COMPANY, LTD. General Purpose Transistors www.datasheet4u.com PNP Silicon FEATURE ƽCo.
Manufacture Leshan Radio Company
Datasheet
Download LBC807-16LT1 Datasheet





Leshan Radio Company LBC807-16LT1
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Siliconwww.datasheet4u.com
FEATURE
ƽCollector current capability IC = -500 mA.
ƽCollector-emitter voltage VCEO(max) = -45 V.
ƽGeneral purpose switching and amplification.
ƽNPN complement: LBC817 Series.
ƽPb-Free Package is available.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LBC807-16LT1
5A 3000/Tape&Reel
LBC807-16LT1G
5A
(Pb-Free)
3000/Tape&Reel
LBC807-25LT1
5B 3000/Tape&Reel
LBC807-25LT1G
5B
(Pb-Free)
3000/Tape&Reel
LBC807-40LT1
5C 3000/Tape&Reel
LBC807-40LT1G
5C
(Pb-Free)
3000/Tape&Reel
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
Value
–45
–50
–5.0
–500
Unit
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol
PD
R θJA
PD
R θJA
T J , T stg
Max Unit
225 mW
1.8 mW/°C
556 °C/W
300
2.4
417
–55 to +150
mW
mW/°C
°C/W
°C
LBC807-16LT1
LBC807-25LT1
LBC807-40LT1
3
1
2
SOT–23
1
BASE
3
COLLECTOR
2
EMITTER
LBC807_S-1/3



Leshan Radio Company LBC807-16LT1
LESHAN RADIO COMPANY, LTD.
www.datasEhLeEetC4uT.RcoICmAL CHARACTERISTICS (T A = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mA)
Collector–Emitter Breakdown Voltage
(VEB = 0, IC = –10 µA)
Emitter–Base Breakdown Voltage
(IE = –1.0 µA)
Collector Cutoff Current
(V CB = –20 V)
(V CB = –20 V, TJ = 150°C)
V(BR)CEO
V(BR)CES
V(BR)EBO
I CBO
–45
–50
–5.0
Typ
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min Typ
ON CHARACTERISTICS
DC Current Gain
(IC= –100 mA, VCE = –1.0 V)
LBC807–16
LBC807–25
LBC807–40
(IC = –500 mA, VCE = –1.0 V)
Collector–Emitter Saturation Voltage
(IC = –500 mA, IB = –50 mA)
Base–Emitter On Voltage
(IC = –500 mA, IB= –1.0 V)
h FE
V CE(sat)
V BE(on)
100 —
160 —
250 —
40 —
——
——
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = –10 V, f = 1.0 MHz)
fT
C obo
100 —
— 10
LBC807 Series
Max Unit
—V
—V
—V
–100
–5.0
nA
µA
Max Unit
250
400
600
–0.7
V
–1.2 V
— MHz
— pF
LBC807_S-2/3



Leshan Radio Company LBC807-16LT1
LESHAN RADIO COMPANY, LTD.
www.datasheet4u.com
A
L
3
BS
12
VG
C
D
H
K
LBC807 Series
SOT-23
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
INCHES
MILLIMETERS
MIN MAX MIN MAX
A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
K 0.0140 0.0285 0.35 0.69
L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60
0.037
0.95
0.035
0.9
0.037
0.95
0.079
2.0
0.031
0.8
inches
mm
LBC807_S-3/3





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