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LBC846BWT1 Dataheets PDF



Part Number LBC846BWT1
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description (LBC846xWT1 - LBC848xWT1) General Purpose Transistors NPN Silicon
Datasheet LBC846BWT1 DatasheetLBC846BWT1 Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon www.datasheet4u.com Pb– Free Package May be Available. The G.Suffix Denotes a Pb– Free Lead Finish ORDERING INFORMATION ( Pb– Free ) Device LBC846AWT1G,BWT1G LBC847AWT1G,BWT1G,CWT1G LBC848AWT1G,BWT1G,CWT1G Package SOT-323 SOT-323 SOT-323 Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel LBC846AWT1,BWT1 LBC847AWT1,BWT1 CWT1 LBC848AWT1,BWT1 CWT1 3 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Volta.

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon www.datasheet4u.com Pb– Free Package May be Available. The G.Suffix Denotes a Pb– Free Lead Finish ORDERING INFORMATION ( Pb– Free ) Device LBC846AWT1G,BWT1G LBC847AWT1G,BWT1G,CWT1G LBC848AWT1G,BWT1G,CWT1G Package SOT-323 SOT-323 SOT-323 Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel LBC846AWT1,BWT1 LBC847AWT1,BWT1 CWT1 LBC848AWT1,BWT1 CWT1 3 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V EBO BC846 65 80 6.0 100 BC847 45 50 6.0 100 BC848 30 30 5.0 100 Unit V V V mAdc 1 2 SOT–323 /SC–70 IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Junction and Storage Temperature Symbol PD R θJA PD T J , T stg Max 150 833 2.4 –55 to +150 Unit mW °C/W mW/°C °C 1 BASE 3 COLLECTOR 2 EMITTER DEVICE MARKING LBC846AWT1 = 1A; LBC846BWT1 = 1B; LBC847AWT1 = 1E; LBC847BWT1 = 1F; LBC847CWT1 = 1G; LBC848AWT1 = 1J; LBC848BWT1 = 1K; LBC848CWT1 = 1L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10 mA) Collector–Emitter Breakdown Voltage (IC = 10 µA, VEB = 0) Collector–Base Breakdown Voltage (IC = 10 µA) Emitter–Base Breakdown Voltage (IE = 1.0 µA) LBC846 Series LBC847 Series LBC848 Series LBC846 Series LBC847 Series LBC848 Series LBC846 Series LBC847 Series LBC848 Series LBC846 Series LBC847 Series LBC848 Series V (BR)CEO V (BR)CES V (BR)CBO V (BR)EBO I CBO Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) 1.FR–5=1.0 x 0.75 x 0.062in 65 45 30 80 50 30 80 50 30 6.0 6.0 5.0 — — — — — — — — — — — — — — — — — — — — — — — — — — — — 15 5.0 v v v v nA µA K5–1/5 LESHAN RADIO COMPANY, LTD. LBC846AWT1,BWT1 LBC847AWT1,BWT1 CWT1 LBC848AWT1,BWT1,CWT1 ELECTRICAL CHARACTERISTICS(TA = 25°C unless otherwise noted) (Continued) www.datasheet4u.com Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (I C = 10 µA, V CE = 5.0 V) (I C = 2.0 mA, V CE = 5.0 V) LBC846A, LBC847A, LBC848A LBC846B, LBC847B, LBC848B LBC847C, LBC848C LBC846A, LBC847A, LBC848A LBC846B, LBC847B, LBC848B LBC847C, LBC848C h FE Collector–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) Collector–Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA) Base–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) Base–Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA) Base–Emitter Voltage (I C = 2.0 mA, V CE = 5.0 V) Base–Emitter Voltage (I C = 10 mA, V CE = 5.0 V) V CE(sat) V BE(sat) V BE(on) — — — 110 200 420 — — — — 580 — 90 150 270 180 290 520 — — 0.7 0.9 660 — — — — 220 450 800 0.25 0.6 — — 700 770 — V V mV SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (I C = 10 mA, V CE = 5.0 Vdc, f = 100 MHz) Output Capacitance (V CB = 10 .


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