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LBC848BWT1 Dataheets PDF



Part Number LBC848BWT1
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description (LBC846xWT1 - LBC848xWT1) General Purpose Transistors NPN Silicon
Datasheet LBC848BWT1 DatasheetLBC848BWT1 Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon www.datasheet4u.com Pb– Free Package May be Available. The G.Suffix Denotes a Pb– Free Lead Finish ORDERING INFORMATION ( Pb– Free ) Device LBC846AWT1G,BWT1G LBC847AWT1G,BWT1G,CWT1G LBC848AWT1G,BWT1G,CWT1G Package SOT-323 SOT-323 SOT-323 Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel LBC846AWT1,BWT1 LBC847AWT1,BWT1 CWT1 LBC848AWT1,BWT1 CWT1 3 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Volta.

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon www.datasheet4u.com Pb– Free Package May be Available. The G.Suffix Denotes a Pb– Free Lead Finish ORDERING INFORMATION ( Pb– Free ) Device LBC846AWT1G,BWT1G LBC847AWT1G,BWT1G,CWT1G LBC848AWT1G,BWT1G,CWT1G Package SOT-323 SOT-323 SOT-323 Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel LBC846AWT1,BWT1 LBC847AWT1,BWT1 CWT1 LBC848AWT1,BWT1 CWT1 3 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V EBO BC846 65 80 6.0 100 BC847 45 50 6.0 100 BC848 30 30 5.0 100 Unit V V V mAdc 1 2 SOT–323 /SC–70 IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Junction and Storage Temperature Symbol PD R θJA PD T J , T stg Max 150 833 2.4 –55 to +150 Unit mW °C/W mW/°C °C 1 BASE 3 COLLECTOR 2 EMITTER DEVICE MARKING LBC846AWT1 = 1A; LBC846BWT1 = 1B; LBC847AWT1 = 1E; LBC847BWT1 = 1F; LBC847CWT1 = 1G; LBC848AWT1 = 1J; LBC848BWT1 = 1K; LBC848CWT1 = 1L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10 mA) Collector–Emitter Breakdown Voltage (IC = 10 µA, VEB = 0) Collector–Base Breakdown Voltage (IC = 10 µA) Emitter–Base Breakdown Voltage (IE = 1.0 µA) LBC846 Series LBC847 Series LBC848 Series LBC846 Series LBC847 Series LBC848 Series LBC846 Series LBC847 Series LBC848 Series LBC846 Series LBC847 Series LBC848 Series V (BR)CEO V (BR)CES V (BR)CBO V (BR)EBO I CBO Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) 1.FR–5=1.0 x 0.75 x 0.062in 65 45 30 80 50 30 80 50 30 6.0 6.0 5.0 — — — — — — — — — — — — — — — — — — — — — — — — — — — — 15 5.0 v v v v nA µA K5–1/5 LESHAN RADIO COMPANY, LTD. LBC846AWT1,BWT1 LBC847AWT1,BWT1 CWT1 LBC848AWT1,BWT1,CWT1 ELECTRICAL CHARACTERISTICS(TA = 25°C unless otherwise noted) (Continued) www.datasheet4u.com Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (I C = 10 µA, V CE = 5.0 V) (I C = 2.0 mA, V CE = 5.0 V) LBC846A, LBC847A, LBC848A LBC846B, LBC847B, LBC848B LBC847C, LBC848C LBC846A, LBC847A, LBC848A LBC846B, LBC847B, LBC848B LBC847C, LBC848C h FE Collector–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) Collector–Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA) Base–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) Base–Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA) Base–Emitter Voltage (I C = 2.0 mA, V CE = 5.0 V) Base–Emitter Voltage (I C = 10 mA, V CE = 5.0 V) V CE(sat) V BE(sat) V BE(on) — — — 110 200 420 — — — — 580 — 90 150 270 180 290 520 — — 0.7 0.9 660 — — — — 220 450 800 0.25 0.6 — — 700 770 — V V mV SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (I C = 10 mA, V CE = 5.0 Vdc, f = 100 MHz) Output Capacitance (V CB = 10 V, f = 1.0 MHz) Noise Figure (I C = 0.2 mA, LBC846A, LBC847A,L BC848A LBC846B, LBC847B,L BC848B V CE = 5.0 Vdc, R S = 2.0 kΩ, LBC847C, LBC848C f = 1.0 kHz, BW = 200 Hz) fT Cobo NF 100 — — — — — — — — 4.5 10 4.0 MHz pF dB hFE, NORMALIZED DC CURRENT GAIN 2.0 1.5 1.0 V CE = 10 V T A = 25°C 0.9 0.8 0.7 0.6 T A = 25°C V BE(sat) @ I C /I B=10 V BE(on) @ V CE = 10 V 1.0 0.8 0.6 V, VOLTAGE (VOLTS) 0.5 0.4 0.3 0.2 0.1 0 0.4 0.3 V CE(sat) @ I C /I B = 10 0.2 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 2.0 θVB , TEMPERATURE COEFFICIENT (mV/ °C) I C , COLLECTOR CURRENT (mAdc) Figure 1. Normalized DC Current Gain VCE, COLLECTOR– EMITTER VOLTAGE (V) I C , COLLECTOR CURRENT (mAdc) Figure 2. “Saturation” and “On” Voltages 1.0 T A = 25°C 1.6 –55°C to +125°C 1.2 I C= 200 mA 1.2 1.6 IC= 0.8 IC= I C = 50 mA 10 mA 20 mA I C = 100 mA 2.0 2.4 0.4 2.8 0 0.02 0.1 1.0 10 20 0.2 1.0 10 100 I B , BASE CURRENT (mA) Figure 3. Collector Saturation Region I C , COLLECTOR CURRENT (mA) Figure 4. Base–Emitter Temperature Coefficient K5–2/5 LESHAN RADIO COMPANY, LTD. LBC846AWT1, BWT1 LBC847AWT1, BWT1, CWT1 LBC848AWT1, BWT1, CWT1 www.datasheet4u.com LBC847/LBC848 10.0 fT, CURRENT– GAIN – BANDWIDTH PRODUCT (MHz) V, VOLTAGE (VOLTS) 7.0 5.0 3.0 C ob 2.0 C ib T A = 25°C 400 300 200 100 80 60 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.010 20 30 50 V CE = 10V T A = 25°C 1.0 0.4 0.6 0.81.0 2.0 4.0 6.0 8.010 20 40 V R , REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mAdc) Figure 5. Capacitances hFE , DC CURRENT GAIN (NORMALIZED) Figure 6. Current–Gain – Bandwidth Product 1.0 V CE = 5V T A = 25°C 2.0 1.0 0.5 T A = 25°C 0.8 V, VOLTAGE (VOLTS) V BE(sat) @ I C /I B = 10 0.6 VBE @ VCE = 5.0 V 0.4 0.2 VCE(sat) @ I C /I B= 10 0.2 0 0.1 0.2 1.0 10 100 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 7. DC Current Gain V CE , COLLECTOR– EMITTER VOLT.


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