Document
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
www.datasheet4u.com Pb– Free Package May be Available. The G.Suffix Denotes a Pb– Free Lead Finish
ORDERING INFORMATION ( Pb– Free )
Device
LBC846AWT1G,BWT1G LBC847AWT1G,BWT1G,CWT1G LBC848AWT1G,BWT1G,CWT1G
Package
SOT-323 SOT-323 SOT-323
Shipping
3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel
LBC846AWT1,BWT1 LBC847AWT1,BWT1 CWT1 LBC848AWT1,BWT1 CWT1
3
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V
EBO
BC846 65 80 6.0 100
BC847 45 50 6.0 100
BC848 30 30 5.0 100
Unit V V V mAdc
1 2
SOT–323 /SC–70
IC
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Junction and Storage Temperature Symbol PD R θJA PD T J , T stg Max 150 833 2.4 –55 to +150 Unit mW °C/W mW/°C °C
1 BASE
3 COLLECTOR
2 EMITTER
DEVICE MARKING
LBC846AWT1 = 1A; LBC846BWT1 = 1B; LBC847AWT1 = 1E; LBC847BWT1 = 1F; LBC847CWT1 = 1G; LBC848AWT1 = 1J; LBC848BWT1 = 1K; LBC848CWT1 = 1L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 10 mA) Collector–Emitter Breakdown Voltage (IC = 10 µA, VEB = 0) Collector–Base Breakdown Voltage (IC = 10 µA) Emitter–Base Breakdown Voltage (IE = 1.0 µA)
LBC846 Series LBC847 Series LBC848 Series LBC846 Series LBC847 Series LBC848 Series LBC846 Series LBC847 Series LBC848 Series LBC846 Series LBC847 Series LBC848 Series
V (BR)CEO
V (BR)CES
V (BR)CBO
V (BR)EBO I CBO
Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) 1.FR–5=1.0 x 0.75 x 0.062in
65 45 30 80 50 30 80 50 30 6.0 6.0 5.0 — —
— — — — — — — — — — — — — —
— — — — — — — — — — — — 15 5.0
v
v
v
v nA µA
K5–1/5
LESHAN RADIO COMPANY, LTD.
LBC846AWT1,BWT1 LBC847AWT1,BWT1 CWT1 LBC848AWT1,BWT1,CWT1
ELECTRICAL CHARACTERISTICS(TA = 25°C unless otherwise noted) (Continued)
www.datasheet4u.com Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain (I C = 10 µA, V CE = 5.0 V) (I C = 2.0 mA, V CE = 5.0 V)
LBC846A, LBC847A, LBC848A LBC846B, LBC847B, LBC848B LBC847C, LBC848C LBC846A, LBC847A, LBC848A LBC846B, LBC847B, LBC848B LBC847C, LBC848C
h FE
Collector–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) Collector–Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA) Base–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) Base–Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA) Base–Emitter Voltage (I C = 2.0 mA, V CE = 5.0 V) Base–Emitter Voltage (I C = 10 mA, V CE = 5.0 V)
V CE(sat) V
BE(sat)
V BE(on)
— — — 110 200 420 — — — — 580 —
90 150 270 180 290 520 — — 0.7 0.9 660 —
— — — 220 450 800 0.25 0.6 — — 700 770
—
V V mV
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product (I C = 10 mA, V CE = 5.0 Vdc, f = 100 MHz) Output Capacitance (V CB = 10 V, f = 1.0 MHz) Noise Figure (I C = 0.2 mA, LBC846A, LBC847A,L BC848A LBC846B, LBC847B,L BC848B V CE = 5.0 Vdc, R S = 2.0 kΩ, LBC847C, LBC848C f = 1.0 kHz, BW = 200 Hz) fT Cobo NF 100 — — — — — — — — 4.5 10 4.0 MHz pF dB
hFE, NORMALIZED DC CURRENT GAIN
2.0 1.5
1.0
V CE = 10 V T A = 25°C
0.9 0.8 0.7 0.6
T A = 25°C V BE(sat) @ I C /I B=10 V BE(on) @ V CE = 10 V
1.0 0.8 0.6
V, VOLTAGE (VOLTS)
0.5 0.4 0.3 0.2 0.1 0
0.4 0.3
V CE(sat) @ I C /I B = 10
0.2 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
2.0
θVB , TEMPERATURE COEFFICIENT (mV/ °C)
I C , COLLECTOR CURRENT (mAdc) Figure 1. Normalized DC Current Gain
VCE, COLLECTOR– EMITTER VOLTAGE (V)
I C , COLLECTOR CURRENT (mAdc) Figure 2. “Saturation” and “On” Voltages
1.0
T A = 25°C
1.6
–55°C to +125°C
1.2
I C= 200 mA
1.2
1.6
IC=
0.8
IC= I C = 50 mA 10 mA 20 mA
I C = 100 mA
2.0
2.4
0.4
2.8
0 0.02 0.1 1.0 10 20
0.2
1.0
10
100
I B , BASE CURRENT (mA) Figure 3. Collector Saturation Region
I C , COLLECTOR CURRENT (mA) Figure 4. Base–Emitter Temperature Coefficient
K5–2/5
LESHAN RADIO COMPANY, LTD.
LBC846AWT1, BWT1 LBC847AWT1, BWT1, CWT1 LBC848AWT1, BWT1, CWT1
www.datasheet4u.com
LBC847/LBC848
10.0
fT, CURRENT– GAIN – BANDWIDTH PRODUCT (MHz) V, VOLTAGE (VOLTS)
7.0 5.0 3.0 C ob 2.0 C ib
T A = 25°C
400 300 200 100 80 60 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.010 20 30 50 V CE = 10V T A = 25°C
1.0 0.4 0.6 0.81.0
2.0
4.0 6.0 8.010
20
40
V R , REVERSE VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
hFE , DC CURRENT GAIN (NORMALIZED)
Figure 6. Current–Gain – Bandwidth Product
1.0 V CE = 5V T A = 25°C 2.0 1.0 0.5
T A = 25°C
0.8
V, VOLTAGE (VOLTS)
V BE(sat) @ I C /I B = 10
0.6
VBE @ VCE = 5.0 V
0.4
0.2
VCE(sat) @ I C /I B= 10
0.2 0 0.1 0.2 1.0 10 100 0.2
0.5
1.0
2.0
5.0
10
20
50
100 200
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain
V CE , COLLECTOR– EMITTER VOLT.