Document
LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors
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NPN/PNP Duals (Complimentary)
These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. • Device Marking: LBC846BPDW1T1 = BB LBC847BPDW1T1 = 13F LBC847CPDW1T1 = 13G LBC848BPDW1T1 = 13K LBC848CPDW1T1 = 13L
LBC846BPDW1T1 LBC847BPDW1T1 LBC847CPDW1T1 LBC848BPDW1T1 LBC848CPDW1T1
6 5 4
1 2 3
SOT-363/SC-88 CASE 419B STYLE 1
MAXIMUM RATINGS - NPN
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Ð Continuous Symbol VCEO VCBO VEBO IC LBC846 LBC847 LBC848 65 80 6.0 100 45 50 6.0 100 30 30 5.0 100 Unit V V V mAdc
3
2
1
Q1
Q2
4
5
6
MAXIMUM RATINGS - PNP
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Ð Continuous Symbol VCEO VCBO VEBO IC LBC846 LBC847 LBC848 Unit V V V mAdc
DEVICE MARKING
-65 -80 -5.0 -100 -45 -50 -5.0 -100 -30 -30 -5.0 -100
See Table
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation Per Device FR-5 Board (1) TA = 25˚C Derate Above 25˚C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Range 1. FR-5 = 1.0 x 0.75 x 0.062 in Symbol PD Max 380 250 Unit mW
ORDERING INFORMATION
Device LBC846BPDW1T1 Package SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 Shipping 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel
3.0 RθJA TJ, Tstg 328 -55 to +150
mW/˚C ˚C/W ˚C
LBC847BPDW1T1 LBC847CPDW1T1 LBC848BPDW1T1 LBC848CPDW1T1
LBC846BP - 1/9
LESHAN RADIO COMPANY, LTD.
LBC846BPDW1T1, LBC847BPDW1T1 Series, LBC848BPDW1T1 Series
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ELECTRICAL CHARACTERISTICS (NPN) (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 10 mA) V(BR)CEO LBC846 Series LBC847 Series LBC848 Series V(BR)CES LBC846 Series LBC847B Only LBC848 Series V(BR)CBO LBC846 Series LBC847 Series LBC848 Series V(BR)EBO LBC846 Series LBC847 Series LBC848 Series ICBO 6.0 6.0 5.0 — — — — — — — — — — 15 5.0 nA µA 80 50 30 — — — — — — V 80 50 30 — — — — — — V 65 45 30 — — — — — — V V
Collector–Emitter Breakdown Voltage (IC = 10 µA, VEB = 0)
Collector–Base Breakdown Voltage (IC = 10 mA)
Emitter–Base Breakdown Voltage (IE = 1.0 mA)
Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain (IC = 10 µA, VCE = 5.0 V) hFE LBC846B, LBC847B, LBC848B LBC847C, LBC848C LBC846B, LBC847B, LBC848B LBC847C, LBC848C VCE(sat) VBE(sat) VBE(on) — — 200 420 — — — — 580 — 150 270 290 520 — — 0.7 0.9 660 — — — 475 800 0.25 0.6 — — 700 770 V V mV —
(IC = 2.0 mA, VCE = 5.0 V)
Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base–E.