LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
www.datasheet4u.com
PNP Silicon
These transistors are designed ...
LESHAN RADIO COMPANY, LTD.
General Purpose
Transistors
www.datasheet4u.com
PNP Silicon
These
transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/ SC–70 which is designed for low power surface mount applications.
Features
We declare that the material of product compliance with RoHS requirements.
LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G LBC858AWT1G, BWT1G CWT1G
3
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V
EBO
BC856 –65 –80 –5.0 –100
BC857 –45 –50 –5.0 –100
BC858 –30 –30 –5.0 –100
Unit V V V mAdc
1 2
SOT– 323 / SC-70
IC
3 COLLECTOR
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD R θJA T J , T stg Max 150 833 –55 to +150 Unit mW °C/W °C
2 EMITTER 1 BASE
DEVICE MARKING
LBC856AWT1G= 3A; LBC856BWT1G= 3B; LBC857AWT1G= 3E; LBC857BWT1G = 3F; LBC858AWT1G= 3J; LBC858BWT1G= 3K; LBC858CWT1G= 3L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –10 mA) Collector–Emitter Breakdown Voltage (IC = –10 µA, VEB = 0) Collector–Base Breakdown Voltage (IC = – 10 µA) Emitter–Base Breakdown Voltage (IE = – 1.0 µA)
LBC856 Series LBC857 Series LBC858 Series LBC856 Series LBC857 Series LBC858 Series LBC856 S...