LBC858BWT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors www.datasheet4u.com PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/ SC–70 which is designed for low power surface mount applications. Features We declare that the material of product compliance with RoHS requirements. LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G LBC858AWT1G, BWT1G CWT1G 3 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V EBO BC856 –65 –80 –5.0 –100 BC857 –45 –50 –5.0 –100 BC858 –30 –30 –5.0 –100 Unit V V V mAdc 1 2 SOT– 323 / SC-70 IC 3 COLLECTOR THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD R θJA T J , T stg Max 150 833 –55 to +150 Unit mW °C/W °C 2 EMITTER 1 BASE DEVICE MARKING LBC856AWT1G= 3A; LBC856BWT1G= 3B; LBC857AWT1G= 3E; LBC857BWT1G = 3F; LBC858AWT1G= 3J; LBC858BWT1G= 3K; LBC858CWT1G= 3L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –10 mA) Collector–Emitter Breakdown Voltage (IC = –10 µA, VEB = 0) Collector–Base Breakdown Voltage (IC = – 10 µA) Emitter–Base Breakdown Voltage (IE = – 1.0 µA) LBC856 Series LBC857 Series LBC858 Series LBC856 Series LBC857 Series LBC858 Series LBC856 S...