ESD protection. EMIF04-EAR01F2 Datasheet

EMIF04-EAR01F2 protection. Datasheet pdf. Equivalent

EMIF04-EAR01F2 Datasheet
Recommendation EMIF04-EAR01F2 Datasheet
Part EMIF04-EAR01F2
Description EMI filter and ESD protection
Feature EMIF04-EAR01F2; EMIF04-EAR01F2 www.datasheet4u.com 4-line IPAD™, EMI filter and ESD protection Features ■ ■ ■ ■ ■ .
Manufacture STMicroelectronics
Datasheet
Download EMIF04-EAR01F2 Datasheet





STMicroelectronics EMIF04-EAR01F2
www.datasheet4u.com
EMIF04-EAR01F2
4-line IPAD™, EMI filter and ESD protection
Features
EMI (I/O) low-pass filter
High efficiency in EMI filtering
High density capacitor
Very low PCB space occupation:
1.92 x 1.42 mm²
Very thin package: 0.65 mm
High efficiency in ESD suppression on external
pins (IEC 61000-4-2 level 4)
High reliability offered by monolithic integration
High reduction of parasitic elements through
integration and wafer level packaging
Complies with the following standards
IEC 61000-4-2 Level 4, on output pins
– 15 kV (air discharge)
IEC 61000-4-2 Level 1, on input pins
– 2 kV (air discharge)
Applications
Where EMI filtering in ESD sensitive equipment is
required:
Earpiece and headset for mobile phones
PDAs
MP3 players
Description
The EMIF04-EAR01F2 is a 4-line highly
integrated device designed to suppress EMI/RFI
noise in all systems subjected to electromagnetic
interference. The EMIF04 Flip Chip packaging
means the package size is equal to the die size.
This filter includes ESD protection circuitry, which
prevents damage to the application when
subjected to ESD surges up 15 kV.
Flip Chip
(11 bumps)
Figure 1. Pin configuration (bump side)
123
I1 GND O1 A
I2 O2 B
I3 GND O3 C
I4 GND O4 D
Figure 2. Schematic
R
I1
C
R
I2
C
R
I3
C
R
I4
C
O1
O2
O3
04
GND = A2, C2, D2
TM: IPAD is a trademark of STMicroelectronics.
April 2008
Rev 2
1/7
www.st.com
7



STMicroelectronics EMIF04-EAR01F2
Characteristics
1 Characteristics
EMIF04-EAR01F2
www.datasheet4u.com
Table 1.
Symbol
Absolute maximum ratings (Tamb = 25 °C)
Parameter and test conditions
Value
Unit
Output pins (A3, B3, C3, D3)
ESD discharge IEC61000-4-2, air discharge
VPP
Input pins (A1, B1, C1, D1)
ESD discharge IEC61000-4-2, air discharge
Tj Maximum junction temperature
Top Operating temperature range
Tstg Storage temperature range
15
2
125
- 40 to + 85
- 55 to + 150
kV
°C
°C
°C
Table 2.
Symbol
Electrical characteristics (Tamb = 25 °C)
Parameter
VBR Breakdown voltage
IRM Leakage current @ VRM
VRM Stand-off voltage
VCL Clamping voltage
Rd Dynamic impedance
IPP Peak pulse current
R
Series resistance between input
and output
C Capacitance
VCL VBR VRM
I
IPP
IR
IRM
IRM
IR
VRM VBR VCL
V
IPP
Symbol
Test conditions
Min. Typ. Max. Unit
VBR IR = 1 mA
IRM VRM = 3 V per line
R Tolerance ± 30%
C
VLINE = 0 V, VOSC = 30 mV, F = 1 MHz
Tolerance ± 20%
14 18 V
500 nA
10
5.8 nF
2/7



STMicroelectronics EMIF04-EAR01F2
EMIF04-EAR01F2
Characteristics
Figure 3. S21 (db) all lines attenuation
dB
0.00
www.datasheet4u.co-1m0.00
-20.00
-30.00
-40.00
-50.00
10.0M
30.0M
Line 1
Line 3
F (Hz)
100.0M
300.0M
1.0G
Line 2
Line 4
3.0G
Figure 5.
ESD response to IEC 61000-4-2
(+15 kV air discharge) on one
output
5 V/div
Figure 4. Analog cross talk
dB
0.00
-10.00
-20.00
-30.00
-40.00
-50.00
-60.00
-70.00
-80.00
-90.00
-100.00
100.0k
1.0M
Xtalk
F (Hz)
10.0M
100.0M
1.0G
Figure 6. ESD response to IEC 61000-4-2
(-15 kV air discharge) on one output
5 V/div
80 ns/div
Figure 7. Line capacitance versus reverse applied voltage
Cline (nF)
9
8
7
6
5
4
3
2
1
0
012345
F = 1 Mhz
Vosc = 30 mVRMS
Tj = 25° C
Vline (V)
67 8 9
80 ns/div
3/7





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