Rectifier Diode. BYV25X-600 Datasheet

BYV25X-600 Diode. Datasheet pdf. Equivalent

BYV25X-600 Datasheet
Recommendation BYV25X-600 Datasheet
Part BYV25X-600
Description Rectifier Diode
Feature BYV25X-600; BYV25X-600 Rectifier diode, ultrafast Rev. 01 — 12 August 2008 www.datasheet4u.com Product data shee.
Manufacture NXP
Datasheet
Download BYV25X-600 Datasheet





NXP BYV25X-600
BYV25X-600
Rectifier diode, ultrafast
Rev. 01 — 12 August 2008
www.datasheet4u.com
1. Product profile
Product data sheet
1.1 General description
Ultrafast epitaxial rectifier diode in a SOD113 (TO-220F) plastic package.
1.2 Features
I Fast switching
I Soft recovery characteristic
I Low forward voltage drop
I Low thermal resistance
I Isolated package
1.3 Applications
I High frequency switched-mode power
supplies
I Discontinuous Current Mode (DCM)
Power Factor Correction (PFC)
1.4 Quick reference data
I VRRM 600 V
I VF 1.11 V
I IF(AV) 5 A
I trr 60 ns
2. Pinning information
Table 1.
Pin
1
2
mb
Pinning
Description
cathode (k)
anode (a)
mounting base; isolated
Simplified outline
mb
Graphic symbol
ka
001aaa020
12
SOD113 (2-lead TO-220F)



NXP BYV25X-600
NXP Semiconductors
BYV25X-600
Rectifier diode, ultrafast
3. Ordering information
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Table 2. Ordering information
Type number
Package
Name
Description
Version
BYV25X-600
TO-220F
plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOD113
2-lead TO-220 ‘full pack’
4. Limiting values
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average forward current
repetitive peak forward current
non-repetitive peak forward
current
square waveform; δ = 1.0; Th 100 °C
square waveform; δ = 0.5; Th 115 °C
square waveform; δ = 0.5; Th 115 °C
t = 10 ms; sinusoidal waveform
t = 8.3 ms; sinusoidal waveform
Tstg storage temperature
Tj junction temperature
Min Max Unit
- 600 V
- 600 V
- 600 V
- 5A
- 10 A
- 60 A
- 66 A
40
+150
°C
- 150 °C
BYV25X-600_1
Product data sheet
Rev. 01 — 12 August 2008
© NXP B.V. 2008. All rights reserved.
2 of 9



NXP BYV25X-600
NXP Semiconductors
BYV25X-600
Rectifier diode, ultrafast
5. Thermal characteristics
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Table 4. Thermal characteristics
Symbol Parameter
Conditions
Min Typ Max Unit
Rth(j-h) thermal resistance from junction to heatsink with heatsink compound; - - 5.5 K/W
see Figure 1
without heatsink compound - - 5.9 K/W
Rth(j-a) thermal resistance from junction to ambient in free air
- 60 - K/W
10
Zth(j-h)
(K/W)
1
001aaf257
101
P
tp
δ=
T
102
103
106
105 104
103 102
tp
T
101
t
1 10
tp (s)
Fig 1. Transient thermal impedance from junction to heatsink as a function of pulse width
6. Isolation characteristics
Table 5. Isolation limiting values and characteristics
Th = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Visol(RMS) RMS isolation voltage
from all terminals to external heatsink;
f = 50 Hz to 60 Hz; sinusoidal waveform;
relative humidity 65 %; clean and dust free
Cisol isolation capacitance from cathode to external heatsink; f = 1 MHz
Min Typ Max Unit
- - 2500 V
- 10 - pF
BYV25X-600_1
Product data sheet
Rev. 01 — 12 August 2008
© NXP B.V. 2008. All rights reserved.
3 of 9





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