Rectifier Diode. BYV34G-600 Datasheet

BYV34G-600 Diode. Datasheet pdf. Equivalent

BYV34G-600 Datasheet
Recommendation BYV34G-600 Datasheet
Part BYV34G-600
Description Dual Rectifier Diode
Feature BYV34G-600; BYV34G-600 Dual rectifier diode, ultrafast Rev. 01 — 25 February 2009 www.datasheet4u.com Product da.
Manufacture NXP
Datasheet
Download BYV34G-600 Datasheet





NXP BYV34G-600
BYV34G-600
Dual rectifier diode, ultrafast
Rev. 01 — 25 February 2009
www.datasheet4u.com
1. Product profile
Product data sheet
1.1 General description
Ultrafast, dual common cathode, epitaxial rectifier diode in a SOT226 (I2PAK), low-profile
plastic package.
1.2 Features
I Fast switching
I Soft recovery characteristic
I Low switching loss
I Low thermal resistance
I High thermal cycling performance
I Low forward voltage drop
1.3 Applications
I Output rectifiers in high frequency
switched-mode power supplies
I Discontinuous Current Mode (DCM)
Power Factor Correction (PFC)
1.4 Quick reference data
I VRRM 600 V
I VF 1.16 V
I IO(AV) 20 A
I trr 60 ns
2. Pinning information
Table 1.
Pin
1
2
3
mb
Pinning
Description
anode 1
cathode
anode 2
mounting base; cathode
Simplified outline
mb
Graphic symbol
13
2
sym084
123
SOT226 (I2PAK)



NXP BYV34G-600
NXP Semiconductors
BYV34G-600
Dual rectifier diode, ultrafast
3. Ordering information
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Table 2. Ordering information
Type number Package
Name Description
BYV34G-600 I2PAK plastic single-ended package (I2PAK); low-profile 3-lead TO-220AB
4. Limiting values
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VRRM
VRWM
VR
IO(AV)
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average output current
DC; Tmb 138 °C
square waveform; δ = 0.5; Tmb 107 °C; both
diodes conducting
IFRM repetitive peak forward current
tp = 25 µs square waveform; δ = 0.5;
Tmb 107 °C; per diode
IFSM
non-repetitive peak forward current
tp = 10 ms; sinusoidal waveform; per diode
tp = 8.3 ms; sinusoidal waveform; per diode
Tstg storage temperature
Tj junction temperature
Version
SOT226
Min Max
- 600
- 600
- 600
- 20
Unit
V
V
V
A
- 20 A
- 120 A
- 132 A
40 +150 °C
- 150 °C
BYV34G-600_1
Product data sheet
Rev. 01 — 25 February 2009
© NXP B.V. 2009. All rights reserved.
2 of 9



NXP BYV34G-600
NXP Semiconductors
BYV34G-600
Dual rectifier diode, ultrafast
5. Thermal characteristics
www.datasheet4u.com
Table 4. Thermal characteristics
Symbol Parameter
Conditions
Rth(j-mb) thermal resistance from junction to
mounting base
with heatsink compound
per diode; see Figure 1
with heatsink compound;
both diodes conducting
Rth(j-a) thermal resistance from junction to ambient in free air
Min Typ Max Unit
- - 2.4 K/W
- - 1.6 K/W
- 60 - K/W
10
Zth(j-mb)
(K/W)
1
001aag912
101
102
P δ = tp
T
103
106
105
104
103
102
101
tp
T
t
1 10
tp (s)
Fig 1. Transient thermal impedance from junction to mounting base per diode as a function of pulse width
BYV34G-600_1
Product data sheet
Rev. 01 — 25 February 2009
© NXP B.V. 2009. All rights reserved.
3 of 9





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