Schottky rectifier. STPS20120C Datasheet

STPS20120C rectifier. Datasheet pdf. Equivalent

STPS20120C Datasheet
Recommendation STPS20120C Datasheet
Part STPS20120C
Description power Schottky rectifier
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Manufacture STMicroelectronics
Datasheet
Download STPS20120C Datasheet





STMicroelectronics STPS20120C
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STPS20120C
Power Schottky rectifier
Datasheet - production data
Description
This dual diode Schottky rectifier is suited for high
frequency switched mode power supplies.
Packaged in DPAK, TO-220AB, TO-220AB
narrow leads and I²PAK, this device is intended to
be used in notebook and LCD adaptors, desktop
SMPS, providing in these applications a margin
between the remaining voltages applied on the
diode and the voltage capability of the diode.
Table 1. Device summary
Symbol
Value
IF(AV)
VRRM
Tj (max)
VF (typ)
2 X 10 A
120 V
175 °C
0.70 V
Features
High junction temperature capability
Good trade-off between leakage current and
forward voltage drop
Low leakage current
Avalanche capability specified
ECOPACK®2 compliant component for DPAK
on demand
November 2016
This is information on a product in full production.
DocID11212 Rev 4
1/14
www.st.com



STMicroelectronics STPS20120C
Characteristics
1
Characteristics
STPS20120C
Table 2. Absolute ratings (limiting values per diode at Tamb = 25 °C unless otherwise stated)
Symbol
Parameter
Value Unit
VRRM Repetitive peak reverse voltage
120
V
IF(RMS) Forward rms current
30
A
IF(AV)
Average forward current,
= 0.5, square wave
Tc = 150 °C per diode
10
A
Tc = 145 °C per device
20
IFSM Surge non repetitive forward current
tp = 10 ms sinusoidal
150
A
PARM Repetitive peak avalanche power
tp = 10 µs, Tj = 125 °C
330
W
Tstg Storage temperature range
Tj
Maximum operating junction temperature(1)
-65 to +175 °C
175
°C
1. dPtot < 1 condition to avoid thermal runaway for a diode on its own heatsink
dTj Rth(j-a)
Symbol
Rth(j-c) Junction to case
Rth(c) Coupling
Table 3. Thermal parameters
Parameter
per diode
total
Max. value
3
1.8
0.6
Unit
°C/W
When the two diodes 1 and 2 are used simultaneously:
Tj(diode1) = P(diode1) x Rth(j-c)(per diode) + P(diode2) x Rth(c)
Table 4. Static electrical characteristics (per diode)
Symbol
Parameter
Test conditions
Min.
Typ
Max.
Unit
IR(1) Reverse leakage current
Tj = 25 °C
Tj = 125 °C
VR = VRRM
-
-
Tj = 25 °C
Tj = 125 °C
IF = 2.5 A
-
-
VF(2) Forward voltage drop
Tj = 25 °C
Tj = 125 °C
IF = 10 A
-
-
Tj = 25 °C
Tj = 125 °C
IF = 20 A
-
-
1. Pulse test: tp = 5 ms, < 2%
2. Pulse test: tp = 380 µs, < 2%
10
µA
1.5
5
mA
0.70
0.54
0.58
0.92
V
0.70
0.74
1.02
0.81
0.86
To evaluate the conduction losses, use the following equation:
P = 0.62 x IF(AV) + 0.012 x IF2(RMS)
2/14
DocID11212 Rev 4



STMicroelectronics STPS20120C
STPS20120C
Characteristics
Figure 1. Average forward power dissipation
versus average forward current (per diode)
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Figure 2. Average forward current versus
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Figure 3. Normalized avalanche power derating
versus pulse duration (Tj = 125 °C)
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Figure 4. Relative variation of thermal
impedance junction to case versus pulse
duration
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Figure 5. Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
Figure 6. Junction capacitance vs. reverse
voltage applied (typical values, per diode)
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DocID11212 Rev 4
3/14
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