GaAs INFRARED EMITTING DIODE
LED55BF
PACKAGE DIMENSIONS
0.209 (5.31) 0.184 (4.67)
LED55CF
LED56F
0.030 (0.76) NOM
0...
GaAs INFRARED EMITTING DIODE
LED55BF
PACKAGE DIMENSIONS
0.209 (5.31) 0.184 (4.67)
LED55CF
LED56F
0.030 (0.76) NOM
0.155 (3.94) MAX
1.00 (25.4) MIN
ANODE (CASE)
0.100 (2.54) 0.050 (1.27)
SCHEMATIC
0.040 (1.02) 0.040 (1.02) 45°
1
3 Ø0.020 (0.51) 2X
ANODE (Connected To Case) CATHODE
3
1
NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified.
DESCRIPTION
The LED55BF/LED55CF/LED56F series are 940nm LEDs in a wide angle, TO-46 package.
FEATURES
Good optical to mechanical alignment Mechanically and wavelength matched to the TO-18 series photo
transistor Hermetically sealed package High irradiance level
2001 Fairchild Semiconductor Corporation DS300313 6/05/01
1 OF 4
www.fairchildsemi.com
GaAs INFRARED EMITTING DIODE
LED55BF
ABSOLUTE MAXIMUM RATINGS
Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(3,4,5 and 6) Soldering Temperature (Flow)(3,4 and 6) Continuous Forward Current Forward Current (pw, 1µs; 200Hz) Reverse Voltage Power Dissipation (TA = 25°C)(1) Power Dissipation (TC = 25°C)(2) Symbol TOPR TSTG TSOL-I TSOL-F IF IF VR PD PD
LED55CF
Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec 100 10 3 170 1.3
LED56F
Unit °C °C °C °C mA A V mW W
(TA = 25°C unless otherwise specified)
NOTE: 1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient. 2. Derate power dissipation linearly 13.0 mW/°C above 25°C case. 3....