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LED55BF

Fairchild Semiconductor

GaAs INFRARED EMITTING DIODE

GaAs INFRARED EMITTING DIODE LED55BF PACKAGE DIMENSIONS 0.209 (5.31) 0.184 (4.67) LED55CF LED56F 0.030 (0.76) NOM 0...


Fairchild Semiconductor

LED55BF

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Description
GaAs INFRARED EMITTING DIODE LED55BF PACKAGE DIMENSIONS 0.209 (5.31) 0.184 (4.67) LED55CF LED56F 0.030 (0.76) NOM 0.155 (3.94) MAX 1.00 (25.4) MIN ANODE (CASE) 0.100 (2.54) 0.050 (1.27) SCHEMATIC 0.040 (1.02) 0.040 (1.02) 45° 1 3 Ø0.020 (0.51) 2X ANODE (Connected To Case) CATHODE 3 1 NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. DESCRIPTION The LED55BF/LED55CF/LED56F series are 940nm LEDs in a wide angle, TO-46 package. FEATURES Good optical to mechanical alignment Mechanically and wavelength matched to the TO-18 series phototransistor Hermetically sealed package High irradiance level  2001 Fairchild Semiconductor Corporation DS300313 6/05/01 1 OF 4 www.fairchildsemi.com GaAs INFRARED EMITTING DIODE LED55BF ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(3,4,5 and 6) Soldering Temperature (Flow)(3,4 and 6) Continuous Forward Current Forward Current (pw, 1µs; 200Hz) Reverse Voltage Power Dissipation (TA = 25°C)(1) Power Dissipation (TC = 25°C)(2) Symbol TOPR TSTG TSOL-I TSOL-F IF IF VR PD PD LED55CF Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec 100 10 3 170 1.3 LED56F Unit °C °C °C °C mA A V mW W (TA = 25°C unless otherwise specified) NOTE: 1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient. 2. Derate power dissipation linearly 13.0 mW/°C above 25°C case. 3....




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