SCHOTTKY RECTIFIER. STPS20170C Datasheet

STPS20170C RECTIFIER. Datasheet pdf. Equivalent

STPS20170C Datasheet
Recommendation STPS20170C Datasheet
Part STPS20170C
Description HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Feature STPS20170C; ® STPS20170C HIGH VOLTAGE POWER SCHOTTKY RECTIFIER www.datasheet4u.com Table 1: Main Product Char.
Manufacture STMicroelectronics
Datasheet
Download STPS20170C Datasheet





STMicroelectronics STPS20170C
®
www.datasheet4u.com
STPS20170C
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Table 1: Main Product Characteristics
IF(AV)
VRRM
Tj
VF(max)
2 x 10 A
170 V
175°C
0.75 V
Features
High reverse voltage
High junction temperature capability
Avalanche specification with derating curves
Benefits
Can challenge bipolar ultrafast diodes with
better dynamic characteristics.
Description
Dual center tap Schottky rectifier diode suited for
high frequency switched mode power supplies.
A1
A2
K
A2
K
A1
TO-220AB
STPS20170CT
A2
K
A1
TO-220FPAB
STPS20170CFP
K
K
A2
A1
D2PAK
STPS20170CG
K
A2
K
A1
I2PAK
STPS20170CR
Table 2: Order Codes
Part Numbers
STPS20170CT
STPS20170CFP
STPS20170CR
STPS20170CG
STPS20170CG-TR
Marking
STPS20170CT
STPS20170CFP
STPS20170CR
STPS20170CG
STPS20170CG
June 2005
REV. 2
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STMicroelectronics STPS20170C
STPS20170C
Table 3: Absolute Ratings (limiting values, per diode)
Symbol
Parameter
VRRM Repetitive peak reverse voltage
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IF(RMS) RMS forward voltage
IF(AV)
Average forward current
δ = 0.5
TO-220AB /
D2PAK / I2PAK
TO-220FPAB
Tc = 155°C
Tc = 135°C
Per diode
Per device
Per diode
Per device
IFSM Surge non repetitive forward current
tp = 10ms sinusoidal
PARM Repetitive peak avalanche power
tp = 1µs Tj = 25°C
Tstg Storage temperature range
Tj Maximum operating junction temperature *
dV/dt Critical rate of rise of reverse voltage
*
:
d----P-----t--o----t
dTj
<
-R----t--h----(-1--j-------a----)
thermal
runaway
condition
for
a
diode
on
its
own
heatsink
Value
170
30
10
20
10
20
180
6700
-65 to + 175
175
10000
Unit
V
A
A
A
W
°C
°C
V/µs
Table 4: Thermal Parameters
Symbol
Parameter
Rth(j-c) Junction to case
TO-220AB / D2PAK / I2PAK
TO-220FPAB
Rth(c)
TO-220AB / D2PAK / I2PAK
TO-220FPAB
When the diodes 1 and 2 are used simultaneously:
Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Per diode
Total
Per diode
Total
Coupling
Value
2.2
1.3
4.5
3.5
0.3
2.5
Unit
°C/W
Table 5: Static Electrical Characteristics (per diode)
Symbol
Parameter
Tests conditions
IR *
Tj = 25°C
Reverse leakage current
Tj = 125°C
VR = VRRM
VF ** Forward voltage drop
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
IF = 10A
IF = 20A
Min. Typ
0.69
0.79
Pulse test:
* tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.64 x IF(AV) + 0.011 IF2(RMS)
Max.
15
15
0.90
0.75
0.99
0.86
Unit
µA
mA
V
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STMicroelectronics STPS20170C
STPS20170C
Figure 1: Average forward power dissipation
versus average forward current (per diode)
PF(AV)(W)
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9
δ = 0.05 δ = 0.1 δ = 0.2
δ = 0.5
8
7
δ=1
6
5
4
3
T
2
1
IF(AV)(A)
δ=tp/T
tp
0
0 1 2 3 4 5 6 7 8 9 10 11 12
Figure 2: Average forward current versus
ambient temperature (δ = 0.5, per diode)
IF(AV)(A)
12
11 Rth(j-a)=Rth(j-c) (TO-220AB, I2PAK and D2PAK)
10
9 Rth(j-a)=Rth(j-c) (TO-220FPAB)
8
7 Rth(j-a)=15°C/W
6
5
4
3T
2
1 δ=tp/T
0
0 25
tp
50
Tamb(°C)
75 100 125 150 175
Figure 3: Normalized avalanche
derating versus pulse duration
PARM(tp)
PARM(1µs)
1
power
0.1
0.01
0.001
0.01
0.1
tp(µs)
1 10
100 1000
Figure 4: Normalized avalanche
derating versus junction temperature
PARM(tp)
PARM(25°C)
1.2
power
1
0.8
0.6
0.4
0.2
Tj(°C)
0
25 50 75 100 125 150
Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode) (TO-220AB, D2PAK, I2PAK)
IM(A)
150
125
100
75
50
IM
25
0
1.E-03
t
δ=0.5
1.E-02
t(s)
1.E-01
TC=50°C
TC=75°C
TC=125°C
1.E+00
Figure 6: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode) (TO-220FPAB)
IM(A)
100
90
80
70
60 TC=50°C
50
40 TC=75°C
30
20 IM
10
0
1.E-03
t
δ=0.5
1.E-02
t(s)
1.E-01
TC=125°C
1.E+00
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