STPS20170C

STPS20170C High voltage power Schottky rectifier Datasheet - production data A1 K A2 K A2 K A1 TO-220AB K A2 K A1 TO-220FPAB K A2 A1 D²PAK A2 A1 Description Dual center tap Schottky rectifier diode suited for high frequency switched mode power supplies. Table 1: Device summary Symbol Value IF(AV) 2 x 10 A VRRM 170 V Tj (max.) VF (typ.) 175 °C 0.69 V Features  High reverse voltage  High junction temperature capability  Avalanche specification with derating curves  Insulated package TO-220FPAB  Insulating voltage: 2000 VRMS sine  ECOPACK®2 compliant component for D²PAK on demand Benefits  Can challenge bipolar ultrafast diodes with better dynamic characteristics October 2016 DocID10243 Rev 3 This is information on a product in full production. 1/15 www.st.com Characteristics STPS20170C 1 Characteristics Table 2: Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 170 V IF(RMS) Forward rms current 30 A IF(AV) Average forward current δ = 0.5, square wave TO-220AB / D²PAK TO-220FPAB TC = 155 °C TC = 150 °C TC = 135 °C TC = 115 °C Per diode Total Per diode Total 10 20 A 10 20 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 180 A PARM Tstg Tj Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature (1) tp = 10 µs, Tj = 125 °C 480 W -65 to +175 °C 175 Notes: (1)(dPtot/dTj) <...