SCHOTTKY RECTIFIER. STPS20150CG Datasheet

STPS20150CG RECTIFIER. Datasheet pdf. Equivalent

STPS20150CG Datasheet
Recommendation STPS20150CG Datasheet
Part STPS20150CG
Description HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Feature STPS20150CG; ® STPS20150CT/CG/CR/CFP HIGH VOLTAGE POWER SCHOTTKY RECTIFIER www.datasheet4u.com MAIN PRODUCT CH.
Manufacture STMicroelectronics
Datasheet
Download STPS20150CG Datasheet





STMicroelectronics STPS20150CG
®
www.datasheet4u.com
STPS20150CT/CG/CR/CFP
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV)
VRRM
Tj
VF (max)
2 x 10 A
150 V
175°C
0.75 V
A1
A2
K
K
K
FEATURES AND BENEFITS
s HIGH JUNCTION TEMPERATURE CAPABILITY
s GOOD TRADE OFF BETWEEN LEAKAGE
CURRENT AND FORWARD VOLTAGE DROP
s LOW LEAKAGE CURRENT
s AVALANCHE CAPABILITY SPECIFIED
A2
A1
D2PAK
STPS20150CG
A2
K
A1
I2PAK
STPS20150CR
DESCRIPTION
Dual center tap schottky rectifier designed for
high frequency Switched Mode Power
Supplies.
A2
K
A1
TO-220AB
STPS20150CT
A2
K
A1
TO-220FPAB
STPS20150CFP
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
150 V
IF(RMS) RMS forward current
30 A
IF(AV) Average forward current TO-220AB
Tc = 155°C Per diode
δ = 0.5
D2PAK / I2PAK
10
A
TO-220FPAB Tc = 135°C Per device
20
IFSM Surge non repetitive forward current
tp = 10 ms sinusoidal
180 A
PARM Repetitive peak avalanche power
tp = 1µs Tj = 25°C
6700
W
Tstg Storage temperature range
- 65 to + 175 °C
Tj Maximum operating junction temperature
175 °C
dV/dt Critical rate of rise of reverse voltage
10000
V/µs
July 2003 - Ed: 6D
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STMicroelectronics STPS20150CG
STPS20150CT/CG/CR/CFP
THERMAL RESISTANCES
Symbol
www.datasheRett4hu(j.-cco) m Junction to case
Rth(c)
Parameter
TO-220AB / D2PAK / I2PAK
TO-220FPAB
TO-220AB / D2PAK / I2PAK
TO-220FPAB
TO-220AB / D2PAK / I2PAK
TO-220FPAB
Per diode
Total
Coupling
Value
2.2
4.5
1.3
3.5
0.3
2.5
Unit
°C/W
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Tests conditions
IR * Reverse leakage current Tj = 25°C
VR = VRRM
Tj = 125°C
VF ** Forward voltage drop
Tj = 25°C
IF = 10 A
Tj = 125°C
Tj = 25°C
IF = 10 A
IF = 20 A
Tj = 125°C IF = 20 A
Pulse test : * tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.64 x IF(AV) + 0.011 IF2(RMS)
Min.
Typ.
0.69
0.79
Max.
5.0
5.0
0.92
0.75
1
0.86
Unit
µA
mA
V
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STMicroelectronics STPS20150CG
STPS20150CT/CG/CR/CFP
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
www.datasheePtF4(uA.Vc)o(Wm)
10
9
8
7
6
5
4
3
2
1
0
012
δ = 0.05 δ = 0.1 δ = 0.2
δ = 0.5
δ=1
T
IF(AV)(A)
δ=tp/T
tp
3 4 5 6 7 8 9 10 11 12
Fig. 2: Average forward current versus ambient
temperature (δ = 0.5, per diode).
IF(AV)(A)
12
11
10
9
8
7
6
5
4
3T
2
1 δ=tp/T
0
0 25
Rth(j-a)=Rth(j-c) (TO-220AB, I2PAK and D2PAK)
Rth(j-a)=Rth(j-c) (TO-220FPAB)
Rth(j-a)=15°C/W
tp
50
Tamb(°C)
75 100 125 150 175
Fig. 3: Normalized avalanche power derating ver-
sus pulse duration.
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1 10
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
Tj(°C)
0
100 1000
0 25 50 75 100 125 150
Fig. 5-1: Non repetitive surge peak forward cur-
rent versus overload duration (maximum values,
per diode). TO-220AB, I²PAK and D²PAK
IM(A)
150
TO-220AB, I2PAK and D2PAK
125
100
75
50
IM
25
0
1.E-03
t
δ=0.5
1.E-02
t(s)
1.E-01
TC=50°C
TC=75°C
TC=125°C
1.E+00
Fig. 5-2: Non repetitive surge peak forward cur-
rent versus overload duration (maximum values,
per diode). TO-220FPAB
IM(A)
100
90
80
70
60
50
40
30
20 IM
10
0
1.E-03
t
δ=0.5
1.E-02
t(s)
TO-220FPAB
1.E-01
TC=50°C
TC=75°C
TC=125°C
1.E+00
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