Document
GaAs INFRARED EMITTING DIODE
LED55B
PACKAGE DIMENSIONS
0.209 (5.31) 0.184 (4.67)
LED55C
LED56
0.030 (0.76) NOM
0.255 (6.48)
1.00 (25.4) MIN
ANODE (CASE)
0.100 (2.54) 0.050 (1.27)
SCHEMATIC
1 0.040 (1.02) 0.040 (1.02) 45° Ø0.020 (0.51) 2X 3
ANODE (Connected To Case) CATHODE
3
NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified.
1
DESCRIPTION
The LED55B/LED55C/LED56 are 940 nm LEDs in a narrow angle, TO-46 package.
FEATURES
• Good optical to mechanical alignment • Mechanically and wavelength matched to the TO-18 series phototransistor • Hermetically sealed package • High irradiance level
2001 Fairchild Semiconductor Corporation DS300312 6/05/01
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www.fairchildsemi.com
GaAs INFRARED EMITTING DIODE
LED55B
ABSOLUTE MAXIMUM RATINGS
Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(3,4,5 and 6) Soldering Temperature (Flow)(3,4 and 6) Continuous Forward Current Forward Current (pw, 1µs; 200Hz) Reverse Voltage Power Dissipation (TA = 25°C)(1) Power Dissipation (TC = 25°C)(2) (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F IF IF VR PD PD
LED55C
Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec 100 10 3 170 1.3
LED56
Unit °C °C °C °C mA A V mW W
NOTE: 1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient. 2. Derate power dissipation linearly 13.0 mW/°C above 25°C case. 3. RMA flux is recommended. 4. Methanol or isopropyl alcohols are recommended as cleaning agents. 5. Soldering iron tip 1/16” (1.6mm) minimum from housing. 6. As long as leads are not under any stress or spring tension 7. Total power output, PO, is the total power radiated by the device into a solid angle of 2 # steradians.
ELECTRICAL / OPTICAL CHARACTERISTICS
PARAMETER TEST CONDITIONS
(TA =25°C) (All measurements made under pulse conditions)
SYMBOL MIN TYP MAX UNITS
Peak Emission Wavelength Emission Angle at 1/2 Power Forward Voltage Reverse Leakage Current Total Power LED55B(7) Total Power LED55C(7) Total Power LED56(7) Rise Time 0-90% of output Fall Time 100-10% of output
IF = 100 mA IF = 100 mA IF = 100 mA VR = 3 V IF = 100 mA IF = 100 mA IF = 100 mA
!P " VF IR PO PO PO tr tf
— — — — 3.5 5.4 1.5 — —
940 ±8 — — — — — 1.0 1.0
— — 1.7 10 — — — — —
nm Deg. V µA mW mW mW µs µs
www.fairchildsemi.com
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6/05/01
DS300312
GaAs INFRARED EMITTING DIODE
LED55B
TYPICAL PERFORMANCE CURVES
Figure 1. Power Output vs. Input Current
100 50 20 10 PO, NORMALIZED POWER OUTPUT 5 2 1.0 0.5 0.2 0.1 0.05 0.02 0.01 .001 .002 .005 .01 .02 .05 0.1 0.2 0.5 1.0 2 NORMALIZED TO I F = 100 mA TA = 25°C
LED55C
LED56
PULSED PW = 80 µsec FORWARD CURRENT
CONTINUOUS FORWARD CURRENT
5
10
IF, FORWARD CURRENT (A)
Figure 3. Forward Voltage vs. Forward Current Figure 2. Power Output vs. Temperature
1.4 1.2 PO, NORMALIZED POWER OUTPUT 2.0 1.0 0.8 0.6 0.4 0.2 0 NORMALIZED TO I F = 100 mA TA = 25°C IF, FORWARD CU.