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STPS40M100C Dataheets PDF



Part Number STPS40M100C
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description Power Schottky Rectifier
Datasheet STPS40M100C DatasheetSTPS40M100C Datasheet (PDF)

STPS40M100C Datasheet 100 V, 40 A power Schottky rectifier A1 (1) A2 (3) K K (2) K A2 A1K TO-220AB K A2 A1 I²PAK Product status link STPS40M100C Product summary Symbol Value IF(AV) 2 x 20 A VRRM 100 V Tj (max.) 150 °C VF (typ.) 0.585 V Features • High current capability • Avalanche rated • Low forward voltage drop current • High frequency operation • ECOPACK®2 compliant Applications • Switching diode • SMPS • DC/DC converter • LED lighting • Desktop power supply • Notebook adapt.

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STPS40M100C Datasheet 100 V, 40 A power Schottky rectifier A1 (1) A2 (3) K K (2) K A2 A1K TO-220AB K A2 A1 I²PAK Product status link STPS40M100C Product summary Symbol Value IF(AV) 2 x 20 A VRRM 100 V Tj (max.) 150 °C VF (typ.) 0.585 V Features • High current capability • Avalanche rated • Low forward voltage drop current • High frequency operation • ECOPACK®2 compliant Applications • Switching diode • SMPS • DC/DC converter • LED lighting • Desktop power supply • Notebook adapter Description This dual diode Schottky rectifier is suited for high frequency switch mode power supply. Packed in TO-220AB and I2Pak, the STPS40M100C is optimized for use in notebook, game station and desktop adaptors, providing in these applications a good efficiency at both low and high load. DS6170 - Rev 4 - February 2019 For further information contact your local STMicroelectronics sales office. www.st.com STPS40M100C Characteristics 1 Characteristics Table 1. Absolute Ratings (limiting values, per diode, at 25 °C, unless otherwise specified) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) Forward rms current IF(AV) Average forward current, δ = 0.5 TC = 130 °C TC = 120 °C Per diode Per device IFSM Surge non repetitive forward current tp = 10 ms sinusoidal PARM Repetitive peak avalanche power tp = 10 µs , Tj = 125 °C Tstg Storage temperature range Tj Maximum operating junction temperature(1) 1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Value Unit 100 V 60 A 20 A 40 400 A 1668 W -65 to +175 °C 150 °C Symbol Rth(j-c) Rth(c) Table 2. Thermal resistance parameters Junction to case Coupling Parameter Per diode Total Value 1.40 0.95 0.50 Unit °C/W When the diodes 1 and 2 are used simultaneously: ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) For more information, please refer to the following application note : • AN5088 : Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics (per diode) Symbol Parameter IR (1) Reverse leakage current VF (2) Forward voltage drop 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% Test conditions Tj = 25 °C Tj = 125 °C VR = VRRM Tj = 25 °C Tj = 125 °C VR = 70 V Tj = 125 °C IF = 5 A Tj = 125 °C IF = 10 A Tj = 25 °C Tj = 125 °C IF = 20 A Min. Typ. Max. Unit - 70 µA - 15 70 mA 40 µA 7.5 40 mA - 0.415 0.500 - 0.500 0.560 V - 0.780 - 0.585 0.640 To evaluate the conduction losses, use the following equation: P = 0.560 x IF(AV) + 0.004 x IF 2 (RMS) DS6170 - Rev 4 page 2/12 STPS40M100C Characteristics For more information, please refer to the following application notes related to the power losses : • AN604: Calculation of conduction losses in a power rectifier • AN4021: Calculation of reverse losses on a power diode DS6170 - Rev 4 page 3/12 STPS40M100C Characteristics (curves) 1..


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