STS05DTP03

STS05DTP03 www.datasheet4u.com Dual NPN-PNP complementary bipolar transistor Features ■ ■ ■ ■ High gain Low VCE(sat) Simplified circuit design Reduced component count 4 1 5 8 Applications ■ ■ ■ Push-pull or Totem-Pole configuration MOSFET and IGBT gate driving Motor, relay and solenoid driving Figure 1. SO-8 Internal schematic diagram Description The STS05DTP03 is a hybrid dual NPN-PNP complementary power bipolar transistor manufactured by using the latest low voltage planar technology. The STS05DTP03 is housed in dual island SO-8 package with separated terminals for higher assembly flexibility, specifically recommended to be used in Push-Pull or Totem Pole configuration as post IGBTs and MOSFETs driver. Table 1. Device summary Marking S05DTP03 Package SO-8 Packaging Tape and reel Order code STS05DTP03 March 2009 Rev 1 1/10 www.st.com 10 Electrical ratings STS05DTP03 1 Table 2. Electrical ratings Absolute maximum ratings Parameter NPN VCBO VCEO VEBO IC ICM IB IBM PTOT PTOT Tstg TJ Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Base current Base peak current (tP < 1 ms) Total dissipation at Tamb = 25 °C single operation Total dissipation at Tamb = 25 °C couple operation Storage temperature Max. operating junction temperature 45 30 6 5 10 1 2 2 1.6 -65 to 150 °C 150 Value PNP -45 -30 -6 -5 -10 -1 -2 V V V A A A A W W Unit www.datasheet4u.com Symbol Table 3...