STL22NF10

www.datasheet4u.com N-CHANNEL 100V - 0.055 Ω - 22A PowerFLAT™ LOW GATE CHARGE STripFET™ II MOSFET VDSS 100 V RDS(on) <0.060 Ω ID 22 A(1) STL22NF10 TYPE STL22NF10 s s s s s TYPICAL RDS(on) = 0.055 Ω IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE (1mm MAX) VERY LOW THERMAL RESISTANCE VERY LOW GATE CHARGE PowerFLAT™(5x5) DESCRIPTION This application specific Power MOSFET is the second generation of STMicroelectronis unique "STripFET™" technology. The resulting transistor shows extremely low on-resistance and minimal gate charge. The new PowerFLAT™ package allows a significant reduction in board space without compromising performance. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH-EFFICIENCY ISOLATED DC-DC CONVERTERS s TELECOM AND AUTOMOTIVE ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID(2) ID(2) IDM(3) Ptot(2) Ptot(1) dv/dt (5) EAS (6) Tstg Tj February 2003 . Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C (Steady State) Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C (Steady State) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 100 100 ± 20 5.3 3.8 22 4 70 0.03 16 82 -55 to 150 Unit V V V A A A W W W/°C V/ns mJ °C 1/8 STL22NF10 THERMAL DATA Rthj-F Rthj-pcb(4) (*)Thermal Resistance Junction-Foot (Drain) Th...