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LET20030C Dataheets PDF



Part Number LET20030C
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description RF POWER TRANSISTORS Ldmos Enhanced Technology
Datasheet LET20030C DatasheetLET20030C Datasheet (PDF)

LET20030C RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA Designed for GSM / EDGE / IS-97 applications • IS-97 CDMA PERFORMANCES POUT = 4.5 W EFF. = 17 % • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 11 dB gain @ 2000 MHz • ESD PROTECTION ORDER CODE LET20030C M243 epoxy sealed BRANDING LET20030C DESCRIPTION The LET20030C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and indus.

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