LET20030S

LET20030S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA Designed for GSM / EDGE / IS-97 applications EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 30 W with 11 dB gain @ 2000 MHz ESD PROTECTION IS-97 CDMA PERFORMANCES POUT = 4.5 W EFF = 17 % PowerSO-10RF (straight lead) ORDER CODE LET20030S BRANDING LET20030S DESCRIPTION The LET20030S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 2 GHz. LET20030S boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. LET20030S’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. PIN CONNECTION SOURCE GATE DRAIN Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294) ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C) Symbol V(BR)DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation Max. Operating Junction Temperature Storage Temperature Parameter Value 65 -0.5 to +15 ...