LET21008
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
TARGET DATA
Designed for GSM / EDGE / IS-97 ...
LET21008
RF POWER
TRANSISTORS Ldmos Enhanced Technology in Plastic Package
TARGET DATA
Designed for GSM / EDGE / IS-97 / WCDMA applications
EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 8 W with 11 dB gain @ 2170 MHz / 26V NEW LEADLESS PLASTIC PACKAGE ESD PROTECTION
PowerFLAT™(5x5) ORDER CODE LET21008 BRANDING 21008
DESCRIPTION The LET21008 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 2.1 GHz. LET21008 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™. LET21008’s superior linearity performance makes it an ideal solution for base station applications.
PIN CONNECTION
TOP VIEW
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C)
Symbol V(BR)DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70°C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 -0.5 to +15 2.0 TBD 150 -65 to +150 Unit V V A W °C °C
THERMAL DATA
Rth(j-c) Junction -Case Thermal Resistance TBD °C/W
April, 15 2003
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LET21008
ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC
Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) GFS CISS COSS CRSS VGS = 0 V VGS = 0 V VGS = 5 V VDS = 26 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Tes...
