LET21030C

LET21030C RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA Designed for GSM / EDGE / IS-97 / WCDMA applications EXCELLENT THERMAL STABILITY POUT = 30 W with 11 dB gain @ 2170 MHz BeO FREE PACKAGE INTERNAL INPUT MATCHING ESD PROTECTION CASE 465E–03, STYLE 1 epoxy sealed ORDER CODE LET21030C BRANDING LET21030C DESCRIPTION The LET21030C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.1 GHz. The LET21030C is designed for high gain and broadband performance operating in common source mode at 26 V. Its internal matching makes it ideal for base station applications requiring high linearity. PIN CONNECTION 1 3 2 1. Drain 2. Gate 3. Source ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C) Symbol V(BR)DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70 °C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 -0.5 to +15 4 65 200 -65 to +200 Unit V V A W °C °C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 2 °C/W January, 24 2003 1/4 LET21030C ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC (Per Section) Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) GFS CISS* COSS CRSS VGS = 0 V VGS = 0 V VGS = 5 V VDS = 28 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V ID = 20 µA VDS = 26 V VDS = 0 V ID = TBD ID = 1 A ID = 1 A VDD = 26 V VDD = 26 V VDS = 26 V f = 1 MHz f ...