LET9002

LET9002 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 2 W with 17 dB gain @ 960 MHz / 26 V NEW LEADLESS PLASTIC PACKAGE ESD PROTECTION SUPPLIED IN TAPE & REEL OF 3K UNITS PowerFLAT™(5x5) ORDER CODE LET9002 BRANDING 9002 DESCRIPTION The LET9002 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1000 MHz. The LET9002 is designed for high gain and broadband performance operating in common source mode at 26 V. LET9002 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™. It is ideal for digital cellular BTS applications requiring high linearity. PIN CONNECTION TOP VIEW ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C) Symbol V(BR)DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70°C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 -0.5 to +15 0.25 4 150 -65 to +150 Unit V V A W °C °C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 20 °C/W April, 15 2003 1/4 LET9002 ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) gFS CISS COSS CRSS VGS = 0 V VGS = 0 V VGS = 5 V VDS = 26 V VGS = 10 V VDS ...