2SC4596

MCC www.datasheet4u.com
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SC4596 Features With TO-220Fa package Amplifier applications NPN Silicon Power Transistors Rating 60 100 5.0 5.0 25 -55 to +150 -55 to +150 Unit V V V A W O C O C Maximum Ratings Symbol V CEO V CBO V EBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature TO-220Fa Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Collector-Emitter Breakdown Voltage (IC=100mAdc, IB =0) Collector-Base Cutoff Current (VCB=100Vdc,IE =0) Emitter-Base Cutoff Current (VEB =5.0Vdc, IC=0) Forward Current Transfer ratio (IC=1.0Adc, VCE=2.0Vdc) Collector-Emitter Saturation Voltage (IC=4.0Adc, IB =0.2Adc) Base-Emitter Saturation Voltage (IC=4.0Adc,IB =0.2Adc) Min 60 ----Max --10 1.0 Units Vdc uAdc mAdc DIM A B C D E G H I J K L M N O P Q R DIMENSIONS INCHES MIN MAX .02 .03 .29 .30 --.67 .53 --.16 --.40 --.22 .16 .17 .12 .13 --.06 .03 .04 2.84 .11 .18 .22 --.17 --.11 --.02 --.06 MM MIN .60 7.30 --13.50 4.0 ----4.00 3.00 --.70 2.24 4.58 --------10.20 5.70 4.40 3.20 1.50 .90 2.84 5.58 4.40 2.90 .50 1.50 MAX .80 7.70 17.00 --NOTE OFF CHARACTERISTICS V (BR)CEO ICBO IEBO ON CHARACTERISTICS hFE V CE(sat) V BE(SAT) 60 ----320 0.5 1.5 --Vdc Vdc ∅ www.mccsemi.com ...