LET9130

LET9130 RF POWER TRANSISTORS Ldmos Enhanced Technology PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs IS-95 CDMA: 865-895 MHz / 28 V POUT = 25 W EFF. = 29 % EDGE: 920-960 MHz / 28 V POUT = 45 W EFF. = 38 % GSM: 920-960 MHz / 28 V POUT = 135 W EFF. = 51 % EXCELLENT THERMAL STABILITY BeO FREE PACKAGE INTERNAL INPUT MATCHING ESD PROTECTION 1 ORDER CODE LET9130 M265 epoxy sealed BRANDING LET9130 PIN CONNECTION DESCRIPTION The LET9130 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9130 is designed for high gain and broadband performance operating in common source mode at 28 V. Its internal matching makes it ideal for base station applications requiring high linearity. ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C) Symbol V(BR)DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70 °C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 2 3 1. Drain 2. Source 3. Gate Unit V V A W °C °C -0.5 to +15 15 217 200 -65 to +200 THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 0.6 °C/W February, 6 2003 1/6 LET9130 ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC (Per Section) Symbol V(BR)DSS IDSS IDSS IGSS VGS(Q) VDS(ON) GFS COSS CRSS VGS = 0 V VGS = 0 V VGS = 0 V VGS = 5 V VDS = 26 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V ID = 10 µA VDS =...