IXTT140N10P

PolarHTTM Power MOSFET www.datasheet4u.com IXTQ 140N10P IXTT 140N10P VDSS ID25 RDS(on) = = ≤ 100 V 140 A 11 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Continuous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C Maximum Ratings 100 100 ±20 ±30 140 75 300 60 80 2.5 10 600 -55 ... +175 175 -55 ... +150 V V V V A A A A mJ J V/ns W °C °C °C °C °C G = Gate S = Source G S D = Drain TAB = Drain D (TAB) TO-3P (IXTQ) G D S (TAB) TO-268 (IXTT) 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque TO-3P TO-268 (TO-3P) 300 260 Features l l 1.13/10 Nm/lb.in. 5.5 5.0 g g l International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 175° C Characteristic Values Min. Typ. Max. 100 3.0 5.0 ±100 25 500 11 9 V V nA µA µA mΩ mΩ Advantages l l l Easy to mount Space savings High power density VGS = 10 V, ID = 0.5 ID25 VGS = 15 V, ID = 300 A Pulse test, t ≤300 µs, duty cycle d ≤ 2 % © 2006 IX...