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IXTQ150N06P Dataheets PDF



Part Number IXTQ150N06P
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description N-channel MOSFETs
Datasheet IXTQ150N06P DatasheetIXTQ150N06P Datasheet (PDF)

Advanced Technical Information PolarHTTM Power MOSFET www.datasheet4u.com N-Channel IXTQ 150N06P VDSS ID25 RDS(on) = 60 V = 150 A = 10 mΩ Enhancement Mode TO-3P (IXTQ) Symbol VDSS VDGR VGS VGSM ID25 IDRMS IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, R.

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Advanced Technical Information PolarHTTM Power MOSFET www.datasheet4u.com N-Channel IXTQ 150N06P VDSS ID25 RDS(on) = 60 V = 150 A = 10 mΩ Enhancement Mode TO-3P (IXTQ) Symbol VDSS VDGR VGS VGSM ID25 IDRMS IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C Maximum Ratings 60 55 ± 20 ± 30 150 75 280 60 40 1.0 10 480 -55 ... +175 175 -55 ... +150 V V V V A A A A mJ J V/ns W °C °C °C °C °C z G D S (TAB) G = Gate S = Source D = Drain TAB = Drain Features z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z Easy to mount Space savings High power density 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering package for 10s Mounting torque 300 260 Md Weight 1.13/10 Nm/lb.in. 5.5 g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 150°C Characteristic Values Min. Typ. Max. 60 2.5 5.0 ±100 25 250 8 10 V V nA µA µA mΩ VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2004 IXYS All rights reserved DS99254(11/04) IXTQ 150N06P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 32 50 3000 2100 850 27 VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 RG = 10 Ω (External) 53 66 45 118 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 30 55 S pF pF pF ns ns ns ns nC nC nC 0.31 K/W 0.21 K/W TO-3P (IXTQ) Outline gfs Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS= 10 V; ID = 0.5 ID25, pulse test VGS = 0 V, VDS = 25 V, f = 1 MHz C iss www.datasheet4u.com Source-Drain Diode Symbol IS ISM VSD t rr QRM Test Conditions VGS = 0 V Repetitive Characteristic Values (TJ = 25°C, unless otherwise specified) Min. typ. Max. 150 280 1.5 120 2.0 A A V ns µC IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IF = 25 A -di/dt = 100 A/µs VR = 25 V IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXTQ 150N06P Fig. 1. Output Characteristics @ 25ºC 160 140 120 100 80 7V 60 40 20 0 0 0.2 0.4 0.6 0.8 1 1.2 5V 1.4 1.6 1.8 2 VGS = 10V 9V 300 270 240 8V 210 9V VGS = 10V Fig. 2. Extended Output Characteristics @ 25ºC www.datasheet4u.com I D - Amperes I D - Amperes 180 150 120 90 60 30 0 0 1 2 3 4 5 6 7 8 9 10 7V 6V 5V 8V 6V V D S - Volts Fig. 3. Output Characteristics @ 150ºC 160 140 120 VGS = 10V 9V 8V 2.4 2.2 VGS = 10V V D S - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature R D S ( o n ) - Normalized 2 1.8 1.6 1.4 1.2 1 0.8 0.6 I D = 75A I D = 150A I D - Amperes 100 80 60 40 20 0 0 0.5 1 1.5 6V 5V 7V V D S - Volts 2 2.5 3 3.5 4 -50 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature 90 80 External Lead Current Limit Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. Drain Current 2.8 2.6 2.4 R D S ( o n ) - Normalized 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0 25 50 75 VGS = 15V VGS = 10V TJ = 175ºC 70 I D - Amperes TJ = 25ºC 60 50 40 30 20 10 0 I D - Amperes 100 125 150 175 200 225 250 -50 -25 0 25 50 75 100 125 150 175 TC - Degrees Centigrade © 2004 IXYS All rights reserved IXTQ 150N06P Fig. 7. Input Adm ittance 275 250 225 TJ = -40ºC 25ºC 150ºC 70 60 50 Fig. 8. Transconductance 175 150 125 100 g f s - Siemens I D - Amperes www.datasheet4u.com 200 TJ = -40ºC 25ºC 150ºC 40 30 20 10 0 75 50 25 0 3 4 5 6 7 8 9 1 0 0 50 100 150 200 250 300 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 300 10 9 250 8 7 VDS = 30V I D = 75A I G = 10mA I D - Amperes Fig. 10. Gate Charge I S - Amperes 200 VG S - Volts TJ = 150ºC TJ = 25ºC 6 5 4 3 2 1 0 150 100 50 0 0.4 0.6 0.8 V S D - Volts 1 1.2 1.4 1.6 0 20 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area 40 60 80 100 120 Fig. 11. Capacitance 10000 1000 Capacitance - picoFarads C iss R DS(on) Limit 25µs 100µs 1000 C oss I D - Amperes 100 1ms 10ms TJ = 175ºC TC = 25ºC DC C rss f = 1MHz 100 0 5 10 15 10 V DS - Volts 20 25 30 35 40 1 V D S - Volts 5,381,025 5,486,715 6,404,065B1 6,306,728B1 10 100 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 .


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