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Advanced Technical Information
PolarHTTM Power MOSFET
www.datasheet4u.com N-Channel
IXTQ 150N06P
VDSS ID25
RDS(on)
= 60 V = 150 A = 10 mΩ
Enhancement Mode
TO-3P (IXTQ)
Symbol VDSS VDGR VGS VGSM ID25 IDRMS IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C
Maximum Ratings 60 55 ± 20 ± 30 150 75 280 60 40 1.0 10 480 -55 ... +175 175 -55 ... +150 V V V V A A A A mJ J V/ns W °C °C °C °C °C
z
G
D
S
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
Features
z z
International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Advantages
z z z
Easy to mount Space savings High power density
1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering package for 10s Mounting torque
300 260
Md Weight
1.13/10 Nm/lb.in. 5.5 g
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 150°C
Characteristic Values Min. Typ. Max. 60 2.5 5.0 ±100 25 250 8 10 V V nA µA µA mΩ
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2004 IXYS All rights reserved
DS99254(11/04)
IXTQ 150N06P
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 32 50 3000 2100 850 27 VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 RG = 10 Ω (External) 53 66 45 118 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 30 55 S pF pF pF ns ns ns ns nC nC nC 0.31 K/W 0.21 K/W TO-3P (IXTQ) Outline
gfs Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS= 10 V; ID = 0.5 ID25, pulse test VGS = 0 V, VDS = 25 V, f = 1 MHz
C iss www.datasheet4u.com
Source-Drain Diode Symbol IS ISM VSD t rr QRM Test Conditions VGS = 0 V Repetitive
Characteristic Values (TJ = 25°C, unless otherwise specified) Min. typ. Max. 150 280 1.5 120 2.0 A A V ns µC
IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IF = 25 A -di/dt = 100 A/µs VR = 25 V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344
IXTQ 150N06P
Fig. 1. Output Characteristics @ 25ºC
160 140 120 100 80 7V 60 40 20 0 0 0.2 0.4 0.6 0.8 1 1.2 5V 1.4 1.6 1.8 2 VGS = 10V 9V 300 270 240 8V 210 9V VGS = 10V
Fig. 2. Extended Output Characteristics @ 25ºC
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I D - Amperes
I D - Amperes
180 150 120 90 60 30 0 0 1 2 3 4 5 6 7 8 9 10 7V 6V 5V 8V
6V
V D S - Volts Fig. 3. Output Characteristics @ 150ºC
160 140 120 VGS = 10V 9V 8V 2.4 2.2 VGS = 10V
V D S - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature
R D S ( o n ) - Normalized
2 1.8 1.6 1.4 1.2 1 0.8 0.6 I D = 75A I D = 150A
I D - Amperes
100 80 60 40 20 0 0 0.5 1 1.5 6V 5V 7V
V D S - Volts
2
2.5
3
3.5
4
-50
-25
0
25
50
75
100
125
150
175
TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature
90 80 External Lead Current Limit
Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. Drain Current
2.8 2.6 2.4
R D S ( o n ) - Normalized
2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0 25 50 75 VGS = 15V VGS = 10V
TJ = 175ºC
70
I D - Amperes
TJ = 25ºC
60 50 40 30 20 10 0
I D - Amperes
100 125 150 175 200 225 250
-50
-25
0
25
50
75
100
125
150
175
TC - Degrees Centigrade
© 2004 IXYS All rights reserved
IXTQ 150N06P
Fig. 7. Input Adm ittance
275 250 225 TJ = -40ºC 25ºC 150ºC 70 60 50
Fig. 8. Transconductance
175 150 125 100
g f s - Siemens
I D - Amperes
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200
TJ = -40ºC 25ºC 150ºC
40 30 20 10 0
75 50 25 0 3 4 5 6 7 8 9 1 0
0
50
100
150
200
250
300
V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage
300 10 9 250 8 7 VDS = 30V I D = 75A I G = 10mA
I D - Amperes Fig. 10. Gate Charge
I S - Amperes
200
VG S - Volts
TJ = 150ºC TJ = 25ºC
6 5 4 3 2 1 0
150 100
50
0 0.4 0.6 0.8
V S D - Volts
1
1.2
1.4
1.6
0
20
Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area
40
60
80
100
120
Fig. 11. Capacitance
10000 1000
Capacitance - picoFarads
C iss
R DS(on) Limit
25µs 100µs
1000
C oss
I D - Amperes
100
1ms 10ms TJ = 175ºC TC = 25ºC DC
C rss f = 1MHz 100 0 5 10 15 10
V DS - Volts
20
25
30
35
40
1
V D S - Volts
5,381,025 5,486,715 6,404,065B1 6,306,728B1
10
100
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 .