IXTQ150N15P

PolarHTTM Power MOSFET IXTK 150N15P IXTQ 150N15P N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 150 V 150 A 13 m Ω TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 150 V 150 V VGS VGSM Continuous Transient ±20 V ±30 V ID25 ID(RMS) I DM IAR EAR EAS TC = 25° C External lead current limit T C = 25° C, pulse width limited by T JM TC = 25° C TC = 25° C TC = 25° C 150 A 75 A 340 A 60 A 80 mJ 2.5 J dv/dt PD TJ TJM Tstg IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤175° C, RG = 4 Ω TC = 25° C 10 V/ns 714 W -55 ... +175 °C 175 °C -55 ... +175 °C T L TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque Weight TO-3P Symbol TO-264 Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA 300 °C 260 °C 1.13/10 Nm/lb.in. 5.5 g 10 g Characteristic Values Min. Typ. Max. 150 V VGS(th) VDS = VGS, ID = 250µA 3.0 5.0 V IGSS VGS = ±20 VDC, VDS = 0 ±100 nA IDSS VDS = VDSS VGS = 0 V TJ = 175° C 25 µA 500 µA RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % 13 m Ω G D S TO-3P (IXTQ) D (TAB) G DS G = Gate S = Source (TAB) D = Drain TAB = Drain Features l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High po...