RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs
DB-55008L-450
www.datasheet4u.com
RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs
Pr...
Description
DB-55008L-450
www.datasheet4u.com
RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs
Preliminary Data
Features
■ ■ ■ ■ ■ ■ ■
Excellent thermal stability Frequency: 318 - 450 MHz Supply voltage: 13.6 V Output power: 8 W Power gain: 14.6 ± 0.6 dB Efficiency: 52 % - 73 % BeO free amplifier
Description
The DB-55008L-450 is a common source N-channel enhancement-mode lateral field effect RF power amplifier designed for UHF mobile applications. Table 1.
Mechanical specification: L = 60 mm, W = 30 mm
Device summary
Order codes DB-55008L-450
March 2009
Rev 1
1/14
www.st.com 14
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
Contents
DB-55008L-450
Contents
1 www.datasheet4u.com Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 3 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4.1 VDD = 13.6 V, IDQ = 200 mA, PIN = 25 dBm . . . . . . . . . . . . . . . . . . . . . . . . 5
5 6 7 8 9
Test circuit . . . . . . . . . . . ...
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