MRF9080LSR3

Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large −signal, common − www.datasheet4u.com source amplifier applications in 26 volt base station equipment. Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts Output Power @ P1db: 75 Watts Power Gain @ P1db: 18.5 dB Efficiency @ P1db: 55% Internally Matched, Controlled Q, for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 Watts CW Output Power Excellent Thermal Stability Characterized with Series Equivalent Large−Signal Impedance Parameters Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal. In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF9080LR3 MRF9080LSR3 GSM 900 MHz FREQUENCY BAND, 75 W, 26 V LATERAL N−CHANNEL RF POWER MOSFETs CASE 465−06, STYLE 1 NI−780 MRF9080LR3 CASE 465A−06, STYLE 1 NI−780S MRF9080LSR3 Table 1. Maximum Ratings Rating Drain−Source Voltage Gate−Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value − 0.5, +65 − 0.5, +15 250 1.43 − 65 to +150 200 Unit Vdc Vdc W W...