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MRF9085LR3 Dataheets PDF



Part Number MRF9085LR3
Manufacturers Motorola
Logo Motorola
Description RF POWER MOSFETs
Datasheet MRF9085LR3 DatasheetMRF9085LR3 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF9085/D The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors Designed for broadband commercial and industrial applications with www.datasheet4u.com frequencies from 865 to 895 MHz. The high gain and broadband performance N - Channel Enhancement - Mode Lateral MOSFETs of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equi.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF9085/D The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors Designed for broadband commercial and industrial applications with www.datasheet4u.com frequencies from 865 to 895 MHz. The high gain and broadband performance N - Channel Enhancement - Mode Lateral MOSFETs of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. • Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 700 mA IS - 97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power — 20 Watts Power Gain — 17.9 dB Efficiency — 28% Adjacent Channel Power — 750 kHz: - 45.0 dBc @ 30 kHz BW 1.98 MHz: - 60.0 dBc @ 30 kHz BW • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 90 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Low Gold Plating Thickness on Leads, 40µ″ Nominal. • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF9085LR3 MRF9085LSR3 880 MHz, 90 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs Freescale Semiconductor, Inc... CASE 465 - 06, STYLE 1 NI - 780 MRF9085LR3 CASE 465A - 06, STYLE 1 NI - 780S MRF9085LSR3 MAXIMUM RATINGS Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 - 0.5, +15 250 1.43 - 65 to +150 200 Unit Vdc Vdc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value (1) 0.7 Unit °C/W (1) MTTF calculator available at http://www.motorola.com/semiconductors/rf . Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 9 MOTOROLA RF DEVICE DATA  Motorola, Inc. 2004 For More Information On This Product, Go to: www.freescale.com MRF9085LR3 MRF9085LSR3 1 Freescale Semiconductor, Inc. ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model MRF9085LR3 MRF9085LSR3 Class 1 (Minimum) M2 (Minimum) M1 (Minimum) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) www.datasheet4u.com OFF CHARACTERISTICS Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IDSS IDSS IGSS — — — — — — 10 1 1 µAdc µAdc µAdc Characteristic Symbol Min Typ Max Unit Freescale Semiconductor, Inc... ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 µAdc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 700 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 6 Adc) DYNAMIC CHARACTERISTICS (1) Output Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) (1) Part is internally input matched. Coss Crss — — 73 2.9 — — pF pF (continued) VGS(th) VGS(Q) VDS(on) gfs 2.0 — — — — 3.7 0.19 8.0 4.0 — 0.4 — Vdc Vdc Vdc S MRF9085LR3 MRF9085LSR3 2 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS - continued (TC = 25°C unless otherwise noted) Characteristic FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, www.datasheet4u.com f1 = 880.0 MHz, f2 = 880.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) Gps 17 17.9 — dB Symbol Min Typ Max Unit η 36 40 — % IMD — - 31 - 28 dBc IRL — - 21 -9 dB Freescale Semiconductor, Inc... Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 865.0 MHz, f2 = 865.1 MHz) Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 865.0 MHz, f2 = 865.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 865.0 MHz, f2 = 865.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 865.0 MHz, f2 = 865.1 MHz) Power Output, 1 dB Compression Point, CW (VDD = 26 Vdc, IDQ = 700 mA, f1 = 880.0 MHz) Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = .


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