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MRF19060R3 Dataheets PDF



Part Number MRF19060R3
Manufacturers Motorola
Logo Motorola
Description RF POWER FIELD EFFECT TRANSISTORS
Datasheet MRF19060R3 DatasheetMRF19060R3 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19060/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier www.datasheet4u.com applications. • Typical CDMA Performance: 1960 MHz, 26 Volts IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power — 7.5 Watts Power Gain — 12.5 .

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19060/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier www.datasheet4u.com applications. • Typical CDMA Performance: 1960 MHz, 26 Volts IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power — 7.5 Watts Power Gain — 12.5 dB Adjacent Channel Power — 885 kHz: –47 dBc @ 30 kHz BW 1.25 MHz: –55 dBc @ 12.5 kHz BW 2.25 MHz: –55 dBc @ 1 MHz BW • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 26 Vdc, 1.93 GHz, 60 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters • Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. MRF19060 MRF19060R3 MRF19060SR3 1990 MHz, 60 W, 26 V LATERAL N–CHANNEL RF POWER MOSFETs CASE 465–06, STYLE 1 NI–780 MRF19060R3 CASE 465A–06, STYLE 1 NI–780S MRF19060SR3 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC ≥ = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 –0.5, +15 180 1.03 –65 to +150 200 Unit Vdc Vdc Watts W/°C °C °C ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 1 (Minimum) M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.97 Unit °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 5 MOTOROLA RF DEVICE DATA  Motorola, Inc. 2002 MRF19060 MRF19060R3 MRF19060SR3 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 µAdc) Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) www.datasheet4u.com Gate–Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 µAdc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 500 mAdc) Drain–Source On–Voltage (VGS = 10 Vdc, ID = 2 Adc) DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Two–Tone Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) Two–Tone Drain Efficiency (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) Input Return Loss (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) Pout, 1 dB Compression Point (VDD = 26 Vdc, Pout = 60 W CW, f = 1990 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 500 mA, f = 1930 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) (1) Part is internally matched both on input and output. Gps 11 12.5 — dB Crss — 2.7 — pF gfs VGS(th) VGS(Q) VDS(on) — 2 2.5 — 4.7 — 3.9 0.27 — 4 4.5 — S V V V V(BR)DSS IDSS IGSS 65 — — — — — — 6 1 Vdc µAdc µAdc Symbol Min Typ Max Unit η 33 36 — % IMD — –31 –28 dBc IRL — –12 — dB P1dB Ψ — 60 — W No Degradation In Output Power Before and After Test MRF19060 MRF19060R3 MRF19060SR3 2 MOTOROLA RF DEVICE DATA R4 VGG + + C1 C2 R1 R2 R3 + C3 C4 C5 C6 B2 C7 C8 B3 VDD + www.datasheet4u.com Z9 Z10 RF INPUT Z11 Z1 Z2 C10 C9 Z3 Z4 Z5 Z6 Z7 Z8 DUT Z12 Z13 Z14 Z15 Z16 C11 Z17 Z18 RF OUTPUT C12 B2 – B3 C1 C2, C7 C3, C8 C4 C5 C6 C9 C10, C11 C12 R1 R2 R3 R4 Z1 Z2 Z3 Ferrite Beads, Fair Rite, 2743019447 10 µF, 50 V Electrolytic Capacitor, Panasonic #ECEV1HV100R 1000 pF Chip Capacitors, B Case, ATC #100B102JCA500X 0.10 µF Chip Capacitors, B Case, Kemet #CDR33BX104AKWS 5.1 pF Chip Capacitor, B Case, ATC #100B5R1JCA500X 6.2 pF Chip Capacitor, B Case, ATC #100B6R2JCA500X 22 µF, 35 V Tantalum Capacitor, SMT, Sprague 0.8 pF – 8.0 pF Variable Capacitor, Johanson Gigatrim 10 pF Chip Capacitors, B Case, ATC #100B100JCA500X 0.4 pF – 2.5 pF Variable Capacitor, Johanson Gigatrim 1 kΩ, 1/4 W Fixed Film Chip Resistor, 0.08″ x 0.13″ 560 kΩ, 1/4 W Fixed Film Chip Resistor, 0.08″ x 0.13″ 15 Ω, 1/4 W Fixed Film Chip Resistor, 0.08″ x 0.13″ 10 Ω, 1/4 W Fixed Film Chip Resistor, 0.08″ x 0.13″ 0.580″ x 0.074″ Microstrip 0.100″ x 0.074″ Microstrip 0.384″ x 0.074″ Microstrip Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Board 0.152″ x 0.140″ Microstrip 0.090″ x 0.102″ Microstrip 0.245″ x.


MRF19060 MRF19060R3 MRF19060SR3


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