MRF19085LSR3

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF19085/D The RF MOSFET Line RF Power Field Effect Transistors Designed for PCN and PCS base station applications with frequencies from www.datasheet4u.com 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier N - Channel Enhancement - Mode Lateral MOSFETs applications. Typical 2 - Carrier N - CDMA Performance for VDD = 26 Volts, IDQ = 850 mA, Pout = 18 Watts Avg., f1 = 1960 MHz, f2 = 1962.5 MHz IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured over a 30 kHz Bandwidth at f1 - 885 Khz and f2 +885 kHz. Distortion Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Output Power — 18 Watts Avg. Power Gain — 13.0 dB Efficiency — 23% ACPR — - 51 dB IM3 — - 36.5 dBc Internally Matched, Controlled Q, for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 5:1 VSWR, @ 26 Vdc, 1.93 GHz, 90 Watts CW Output Power Excellent Thermal Stability Characterized with Series Equivalent Large - Signal Impedance Parameters Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal. In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. MAXIMUM RATINGS Rating Drain - Source Voltage G...