MRF19090R3

Freescale Semiconductor Technical Data Document Number: MRF19090 Rev. 6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class AB PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM, and multicarrier amplifier applications. www.datasheet4u.com Typical CDMA Performance: 1990 MHz, 26 Volts IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power — 9 Watts Avg. Power Gain — 10 dB Adjacent Channel Power — 885 kHz: - 47 dBc @ 30 kHz BW 1.25 MHz: - 55 dBc @ 12.5 kHz BW 2.25 MHz: - 55 dBc @ 1 MHz BW Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 90 Watts CW Output Power Features Internally Matched for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Excellent Thermal Stability Characterized with Series Equivalent Large - Signal Impedance Parameters RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF19090R3 MRF19090SR3 1930- 1990 MHz, 90 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 1 NI - 880 MRF19090R3 CASE 465C - 02, STYLE 1 NI - 880S MRF19090SR3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ ...