MRF5S19150HSR3 Datasheet - Freescale Semiconductor





MRF5S19150HSR3 Datasheet - RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

MRF5S19150HSR3   MRF5S19150HSR3  

Datasheet: MRF5S19150HSR3 datasheet

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Description: Freescale Semiconductor Technical Data Document Number: MRF5S19150H Rev. 2, 5/ 2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Latera l MOSFETs Designed for PCN and PCS base station applications at frequencies fr om 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applic ations. www.datasheet4u.com • Typical 2 - Carrier N - CDMA Performance for V DD = 28 Volts, IDQ = 1400 mA, Avg., Pou t = 32 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Tra ffic Codes 8 Through 13) Channel Bandwi dth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 14 dB Drain Efficiency — 26% IM3 @ 2.5 M Hz Offset — - 36.5 dBc in 1.2288 MHz Bandw


Manufacture Part Number Description

Freescale Semiconductor

MRF5S19150HSR3

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs




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