LET9045C

LET9045C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features ■ Excellent thermal stability ■ Common source configuration ■ POUT (@28 V) = 45 W with 18.5 dB gain @ 960 MHz ■ POUT (@36V) = 70 W with 18.5 dB gain @ 960 MHz ■ BeO free package ■ In compliance with the 2002/95/EC European directive Description The LET9045C is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9045C is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for base station applications requiring high linearity. M243 epoxy sealed Figure 1. Pin out 1. Drain 2. Gate 1 3 2 3. Source Table 1. Device summary Order code LET9045C Package M243 Branding LET9045C April 2011 Doc ID 15443 Rev 4 1/10 www.st.com 10 Maximum ratings 1 Maximum ratings Table 2. Absolute maximum ratings (TCASE = 25 °C) Symbol Parameter V(BR)DSS VGS ID PDISS TJ TSTG Drain-source voltage Gate-source voltage Drain current Power dissipation (@ TC = 70 °C) Max. operating junction temperature Storage temperature Table 3. Thermal data Symbol Parameter Rth(JC) Junction-case thermal resistance LET9045C Value Unit 80 V -0.5 to +15 V 9 A 108 W 200 °C -65 to +150 °C Value 1.2 Unit °C/W 2/10 Doc ID 15443 Rev 4 LET9045C 2 Electrical characteristics TC = 25 °C Table 4. Symbol Static...