STAP1011-180

STAP1011-180 www.datasheet4u.com RF power transistor the LdmoST family, N-channel enhancement-mode lateral MOSFETs Features ■ ■ ■ ■ ■ Excellent thermal stability Common source configuration push-pull POUT = 180W with 10 dB gain @ 1030 MHz 36 V/100 µsec - 10% Plastic package In compliance with the 2002/95/EC european directive Description The STAP1011-180 is a common source N-channel enhancement-mode lateral field-effect RF power transistor. It is designed for 1030-1090 MHz avionics applications. STAP1011-180 is mounted in STAP ST advanced PowerSO-10RF package. The STAP package was designed to offer high reliability and power capability. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Figure 1. Pin connection 1 4 5 3 2 1, 2 Drain 3 Source 4, 5 Gate Table 1. Device summary Order code STAP1011-180 Package STAP2 Packaging Tube May 2009 Doc ID 15613 Rev 1 1/9 www.st.com 9 Electrical data STAP1011-180 1 www.datasheet4u.com Electrical data Maximum ratings TCASE = 25 °C Table 2. Symbol V(BR)DSS VGS PDISS TJ TSTG 1.1 Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Power dissipation (@ Tc = 70 °C) Max. operating junction temperature Storage temperature Value 65 ± 20 800 165 -65 to + 150 Unit V V W °C °C 1.2 Thermal data Table 3. Symbol RthJC Thermal data (CW) Parameter Junction - case thermal resistance Value 0.10 Unit °C/W 2/9 Doc ID 15613 Rev 1 STAP1011-180 Electrical character...