STAP57060
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RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
Fe...
STAP57060
www.datasheet4u.com
RF power
transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
Features
■ ■ ■ ■
Excellent thermal stability Common source configuration POUT = 60 W with 14.3 dB gain @ 945 MHz / 28 V ST advanced PowerSO-10 RF-STAP-package
Description
The STAP57060 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. STAP57060 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in STAP1 plastic RF power package. STAP package has been specially optmized for RF needs and offers excellent performances and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294) GATE SOURCE
Figure 1.
Pin connection
DRAIN
Table 1.
Device summary
Order codes STAP57060 Package STAP1 Packaging Tube
May 2009
Doc ID 15708 Rev 1
1/16
www.st.com 16
Contents
STAP57060
1
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Contents
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1 2.2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal data . . . . . . . . . . . . . . . . . . . ....