Silicon MOSFET. 2SK1447LS Datasheet

2SK1447LS MOSFET. Datasheet pdf. Equivalent

2SK1447LS Datasheet
Recommendation 2SK1447LS Datasheet
Part 2SK1447LS
Description N-Channel Silicon MOSFET
Feature 2SK1447LS; www.DataSheet4U.com Ordering number : ENN3450B 2SK1447LS N-Channel Silicon MOSFET 2SK1447LS Ultra.
Manufacture Sanyo Semicon Device
Datasheet
Download 2SK1447LS Datasheet





Sanyo Semicon Device 2SK1447LS
www.DataSheet4U.com
Ordering number : ENN3450B
2SK1447LS
N-Channel Silicon MOSFET
2SK1447LS
Ultrahigh-Speed Switching Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
Micaless package facilitating mounting.
Package Dimensions
unit : mm
2078C
[2SK1447LS]
10.0 3.2
4.5
2.8
0.9 1.2
1.2
0.75 0.7
Specifications
Absolute Maximum Ratings at Ta=25°C
123
2.55 2.55
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Tc=25°C
Ratings
450
±30
9
36
2.0
40
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
V(BR)DSS ID=1mA, VGS=0
Zero-Gate Voltage Drain Current
IDSS
VDS=450V, VGS=0
Gate-to-Source Leakage Current
IGSS
VGS=±30V, VDS=0
(Note) Be careful in handling the 2SK1447LS because it has no protection diode between gate and source.
Marking : K1447
min
450
Ratings
typ
max
Unit
V
1.0 mA
±100
nA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1501 TS IM TA-3431 / 61099 TH (KT) / 72597 TS (KOTO) / 7151 JN (KOTO) No.3450-1/4



Sanyo Semicon Device 2SK1447LS
www.DataSheet4U.com
2SK1447LS
Continued from preceding page.
Parameter
Symbol
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
VGS(off)
yfs
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
Conditions
VDS=10V, ID=1mA
VDS=10V, ID=6A
ID=6A, VGS=10V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
ID=6A, VGS=10V, VDD=200V, RGS=50
ID=6A, VGS=10V, VDD=200V, RGS=50
ID=6A, VGS=10V, VDD=200V, RGS=50
ID=6A, VGS=10V, VDD=200V, RGS=50
IS=9A, VGS=0
Switching Time Test Circuit
PW=1µs
D.C.0.5%
VGS
10V
VDD
200V
ID=6A
RL=33.3
D VOUT
G
S
P.G
RGS
50
2SK1447LS
min
2.0
4.0
Ratings
typ
8.0
0.47
1600
220
80
25
60
250
80
max
3.0
0.6
1.8
Unit
V
S
pF
pF
pF
ns
ns
ns
ns
V
ID -- VDS
24
20
V GS=10.0V
6.0V
5.5V
16
5.0V
12
4.5V
8
4.0V
4
3.5V
0
0 4 8 12 16 20 24
Drain-to-Source Voltage, VDS -- V ITR01430
ID -- Tc
28
VDS=10V
24 VGS=10V
20
16
12
8
4
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
ITR01432
ID -- VGS
20
VDS=10V
25°C
16
75°C
12
8
4
0
0 2 4 6 8 10 12 14
Gate-to-Source Voltage, VGS -- V ITR01431
VGS(off) -- Tc
5
VDS=10V
ID=1mA
4
3
2
1
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
ITR01433
No.3450-2/4



Sanyo Semicon Device 2SK1447LS
www.DataSheet4U.com
RDS(on) -- VGS
1.0
0.9
0.8
0.7
ID=3A
12A
0.6
6A
0.5
0.4
0.3
2SK1447LS
Tc=25°C
1.2
1.0
0.8
0.6
0.4
0.2
RDS(on) -- Tc
I D=I6DA=,6VAG, VS=G1S0=V20V
0.2
0 2 4 6 8 10 12 14
Gate-to-Source Voltage, VGS -- V ITR01434
yfs-- ID
2
VDS=10V
10 25°C
7
5
3
Tc= --25°C 75°C
2
1.0
7
5
3
2
5 7 0.1
5
3
2
2 3 5 7 1.0
2 3 5 7 10
23
Drain Current, ID -- A
ITR01436
Ciss, Coss, Crss -- VDS
VGS=0
f=1MHz
Ciss
1000
7
5
3
2
Coss
100
7
5
3
2
0
2.4
Crss
4 8 12 16 20 24 28 32
Drain-to-Source Voltage, VDS -- V ITR01438
PD -- Ta
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
ITR01435
SW Time -- ID
5
VDD=200V P.W.=1µs
3 td(off) VGS=10V D.C.0.5%
2
10 tf
7
tr
5
3 td(on)
2
1.0
5 7 1.0
100
7
5 IDP=36A
23
5 7 10
Drain Current, ID -- A
ASO
23
ITR01437
<1µs
3
2
10µs
10 ID=9A
7
5
100µs
1ms
3
2
1.0
7
5
Operation in this
area is limited by
RDS(oDnC).op1e0r0a1mt0iomsns
3
2
0.1 Tc=25°C
7
5
Single pulse
2 3 5 7 10
2 3 5 7 100 2 3
Drain-to-Source Voltage, VDS -- V
PD -- Tc
50
5 7 1000
ITR01439
2.0
1.6
1.2 No heat sink
0.8
0.4
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C ITR01440
40
30
20
10
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
ITR01441
No.3450-3/4





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)