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RT1P140X SERIES
〈Transistor〉
Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type
DESCRIPTION
RT1P140X is a one chip transistor with built-in bias resistor,NPN type is RT1N140X. RT1P140U
1.6
OUTLINE
DRAWING
RT1P140C
2.5
UNIT:mm
FEATURE
・Built-in bias resistor (R1=10kΩ).
0.5
0.4
0.8
0.4
0.5
1.5
0.5
0.3
① ② ③
0.95
① ② ③
2.9 1.90
1.6 1.0
APPLICATION
Inverted circuit,switching circuit,interface circuit, driver circuit.
0.7 0.15 1.1 0.55 0.8 0.16
0~0.1
R1 B (IN)
C (OUT)
JEITA:- JEDEC:- Terminal Connector ①:Base ②:Emitter ③:Collector
JEITA:SC-59 JEDEC:Similar to TO-236 Terminal Connector ①:Base ②:Emitter ③:Collector
E (GND)
RT1P140M RT1P140S
4.0 0.425 3.0 2.1 1.25 0.425
RT1P140T
0~0.1
Equivalent circuit
0.95
0.5
0.2
0.8
0.2
0.65
0.3
0.4
1.0
1.0
2.0 1.3
0.65
1.2 0.8
0.1 0.45
① ② ③
① ② ③
14.0
0.9
2.5
0.4
0.7
①
②
③
JEITA:- JEDEC:- Terminal Connector ①:Emitter ②:Collector ③:Base
JEITA:SC-70 JEDEC:- Terminal Connector ①:Base ②:Emitter ③:Collector
0~0.1
0.15
0.45
1.27 1.27
ISAHAYA ELECTRONICS CORPORATION
0.4
JEITA:-, JEDEC:- ISAHAYA:- Terminal Connector ①:Base ②:Emitter ③:Collector
0.25
0.4
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RT1P140X SERIES
Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type
MAXIMUM RATING (Ta=25℃)
SYMBOL VCBO VEBO VCEO I C I CM PC Tj Tstg PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation(Ta=25℃) Junction temperature Storage temperature RT1P140T RT1P140U RATING RT1P140M -50 -6 -50 -100 -200 RT1P140C RT1P140S UNIT V V V mA mA mW ℃ ℃ LIMIT TYP
125(※) +125 -55~+125
+150 -55~+150
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL V(BR)CEO I CBO hFE VCE(sat) R1 fT PARAMETER C to E break down voltage Collector cut off current DC forward current gain C to E saturation voltage Input resistance Gain band width product
(※ ) package mounted on 9mm×19mm×1mm glass-epoxy substrate.
TEST CONDITION I C=-100μA,RBE=∞ VCB=-50V,I E =0 VCE=-5V,I C =-1mA I C =-10mA,I B =-0.5mA VCE=-6V,I
E
MIN -50 100 7
MAX -0.1 -0.3 13
UNIT V μA - V kΩ MHz
=10mA
10 150
TYPICAL CHARACTERISTICS
Input on voltage - Collectorcurrent 1000 DC forward current gain - Collector current
-10
VCE=-0.2V
Input on voltage VI(ON) (V) DC forward current gain hFE
VCE=-5V
-1
100
-0.1 -0.1
-1 -10 Collector current Ic (mA)
-100
10 -0.1
-1 -10 Collector current Ic(mA)
-100
Collector voltage - Input off voltage -1000
VCE=-5V
Collector current Ic (uA)
-100
-10 -0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 Input off voltage VI(OFF) (V) -1.6 -1.8 -2
ISAHAYA ELECTRONICS CORPORATION
www.DataSheet4U.com
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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