DatasheetsPDF.com

RT1P237x Dataheets PDF



Part Number RT1P237x
Manufacturers Isahaya Electronics Corporation
Logo Isahaya Electronics Corporation
Description Transistor
Datasheet RT1P237x DatasheetRT1P237x Datasheet (PDF)

www.DataSheet4U.com RT1P237X SERIES 〈Transistor〉 Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type DESCRIPTION RT1P237X is a one chip transistor with built-in bias resistor,NPN type is RT1N237X. RT1P237U 1.6 OUTLINE DRAWING RT1P237C 2.5 UNIT:mm FEATURE ・Built-in bias resistor (R1=2.2kΩ,R2=47kΩ). 0.5 0.4 0.8 0.4 0.5 1.5 0.5 0.3 ① ② ③ 0.95 ① ② ③ 2.9 1.90 1.6 1.0 APPLICATION Inverted circuit,switching circuit,interface circuit, driver circuit. 0.7 0.1.

  RT1P237x   RT1P237x


Document
www.DataSheet4U.com RT1P237X SERIES 〈Transistor〉 Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type DESCRIPTION RT1P237X is a one chip transistor with built-in bias resistor,NPN type is RT1N237X. RT1P237U 1.6 OUTLINE DRAWING RT1P237C 2.5 UNIT:mm FEATURE ・Built-in bias resistor (R1=2.2kΩ,R2=47kΩ). 0.5 0.4 0.8 0.4 0.5 1.5 0.5 0.3 ① ② ③ 0.95 ① ② ③ 2.9 1.90 1.6 1.0 APPLICATION Inverted circuit,switching circuit,interface circuit, driver circuit. 0.7 0.15 1.1 0.55 0.8 0.95 0.5 Equivalent circuit C (OUT) 0~0.1 R1 B (IN) R2 JEITA:- JEDEC:- Terminal Connector ①:Base ②:Emitter ③:Collector JEITA:SC-59 JEDEC:Similar to TO-236 Terminal Connector ①:Base ②:Emitter ③:Collector E (GND) RT1P237M RT1P237S 2.1 4.0 0.425 1.25 0.425 RT1P237T 0~0.1 0.2 0.8 0.2 0.4 0.65 1.0 2.0 1.3 0.4 0.1 0.45 1.2 0.8 ① ② ③ 0.3 ① ② ③ 14.0 1.0 0.65 1.27 1.27 0.9 0.4 0.7 0.15 ① ② ③ JEITA:- JEDEC:- ①:Emitter ②:Collector ③:Base JEITA:SC-70 JEDEC:- Terminal Connector ①:Base ②:Emitter ③:Collector 0~0.1 2.5 0.45 JEITA:-、JEDEC:- ISAHAYA:T-USM Terminal Connector ①:Base ②:Emitter ③:Collector ISAHAYA ELECTRONICS CORPORATION 0.25 3.0 0.16 0.4 RT1P237X SERIES www.DataSheet4U.com 〈Transistor〉 Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type MAXIMUM RATING (Ta=25℃) SYMBOL VCBO VEBO VCEO I C I CM PC Tj Tstg PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation(Ta=25℃) RT1P237T RT1P237U RATING RT1P237M -50 -6 -50 -100 -200 RT1P237C RT1P237S UNIT V V V mA mA mW ℃ ℃ Junction temperature Storage temperature 125(※) +125 -55~+125 1 +150 -55~+150 4 (※ ) package mounted on 9mm×19mm×1mm glass-epoxy substrate. ELECTRICAL CHARACTERISTICS (Ta=25℃) SYMBOL V(BR)CEO I CBO hFE VCE(sat) VI(ON) VI(OFF) R1 R2/R1 fT PARAMETER C to E break down voltage Collector cut off current DC forward current gain C to E saturation voltage Input on voltage Input off voltage Input resistance Resistance ratio Gain band width product TEST CONDITION I C=-100μA,RBE=∞ VCB=-50V,I E =0 VCE=-5V,I C =-10mA I C =-10mA,I B =-0.5mA VCE=-0.2V,I C =-5mA VCE=-5V,I C =-100μA MIN -50 80 -0.7 -0.6 2.2 22 150 -0.3 -1.1 2.9 26 LIMIT TYP MAX -0.1 UNIT V μA - V V V kΩ MHz -0.5 1.5 17 VCE=-6V,I E =10mA TYPICAL CHARACTERISTICS IN P U T ON V OL TA GE V S. C OL L EC TOR C U R R EN T D C F OR W A R D C U R R EN T G A IN V S. C OL L EC TOR C U R R EN T -10 DC FORWARD CURRENT GAIN  h FE INPUT ON VOLTEGE VI(ON)(V) 1000 VCE=-0.2V VCE=-5V -1 100 -0.1 -1 -10 -100 COLLECTOR CURRENT I C(mA) C OL L EC TOR C U R R EN T V S. IN P U T OF F V OL TA GE 10 -1 -10 -100 COLLECTOR CURRENT IC(mA) -1000 COLLECTOR CURRENT I C(μA) VCE=-5V -100 -10 0 -0.4 -0.8 -1.2 -1.6 INPUT OFF VOLTAGE V I(OFF) (V) -2 ISAHAYA ELECTRONICS CORPORATION www.DataSheet4U.com Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. Notes regarding these materials ·These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging ISAHAYA or third party. ·ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials. ·All information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed herein. ·ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or system.


RT1P237x RT1P237x RT1P240x


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)