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2010DN

Fairchild Semiconductor

FYP2010DN

www.DataSheet4U.com FYP2010DN FYP2010DN Features • Low forward voltage drop • High frequency properties and switching ...



2010DN

Fairchild Semiconductor


Octopart Stock #: O-645276

Findchips Stock #: 645276-F

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www.DataSheet4U.com FYP2010DN FYP2010DN Features Low forward voltage drop High frequency properties and switching speed Guard ring for over-voltage protection Applications Switched mode power supply Freewheeling diodes 1 2 3 TO-220 1. Anode 2.Cathode 3. Anode SCHOTTKY BARRIER RECTIFIER Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VRRM VR IF(AV) IFSM TJ, TSTG Parameter Maximum Repetitive Reverse Voltage Maximum DC Reverse Voltage Average Rectified Forward Current @ TC = 120°C Non-repetitive Peak Surge Current (per diode) 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature Value 100 100 20 150 -65 to +150 Units V V A A °C Thermal Characteristics Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case (per diode) Value 1.7 Units °C/W Electrical Characteristics (per diode) Symbol VFM * Parameter Maximum Instantaneous Forward Voltage IF = 10A IF = 10A IF = 20A IF = 20A Maximum Instantaneous Reverse Current @ rated VR Value TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C 0.77 0.65 0.75 mA 0.1 20 Units V IRM * * Pulse Test: Pulse Width=300µs, Duty Cycle=2% ©2002 Fairchild Semiconductor Corporation Rev. A, September 2002 www.DataSheet4U.com FYP2010DN Typical Characteristics 100 10 Forward Current, I F[A] 10 Reverse Current, IR[mA] 1 T J=125 C o 1 0.1 TJ=75 C o TJ=125 C 0.1 o TJ=75 C TJ=25 C o o 0.01 T J=25 C o 0.01 0.0 1E-3 0.5 1.0 1.5 20 40 60 80 100 Forward Vol...




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