Photo Diode
NJL6201R-1
www.DataSheet4U.com
HIGH SPEED PIN PHOTO DIODE
GENERAL DESCRIPTION
The NJL6201R-1 is the high speed PIN phot...
Description
NJL6201R-1
www.DataSheet4U.com
HIGH SPEED PIN PHOTO DIODE
GENERAL DESCRIPTION
The NJL6201R-1 is the high speed PIN photo-diode that attained the short tail performance and the fast monitor of optical storage devices.
ACTIVE AREA
1.8 ±0.15 0.3
OUTLINE (typ.) Unit : mm
Active area: 0.7X0.7mm
0.9 ±0.15
0.5 ±0.15
0.3
0.3
response (tr/tf) required of the laser diode power
1.8 ±0.15
1.16 ±0.15
1.0
FEATURES
Short tail performance Fast rise-time/fall-time 5ns at1-99%, VR=2.5V,λ=780nm/650nm High speed 300MHz at λ=780nm 300MHz at λ=650nm Miniature, thin type 1.8mmX3.6mmX1.16mm
3.6 ±0.15
(2
1.0
×
)R 0.
3
anode cathode
APPLICATIONS
Front laser power monitor for CD-R/RW, DVD+/-R/RW/-RAM, recordable MD etc.
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER Reverse Voltage Operating Temperature Storage Temperature Reflow Soldering Temperature SYMBOL VR Topr Tstg Tsol RATINGS 35 -30 to +85 -40 to +100 260 UNIT V °C °C °C
ELECTRO-OPTICAL CHARACTERISTICS (Ta=25°C)
PARAMETER Dark Current Forward Voltage Capacitance Peak Wavelength Sensitivity Rise time/Fall time Cut off Frequency SYMBOL ID VF Ct λP S tr/tf fc TEST CONDITION VR=10V IF=1mA VR=2.5V, f=1MHz MIN
— VR=2.5V, λ=780nm VR=2.5V, λ=650nm VR=2.5V, λ=780nm, 1-99% VR=2.5V, λ=650nm, 1-99% VR=2.5V, λ=780nm, RL=50Ω, -3dB VR=2.5V, λ=650nm, RL=50Ω, -3dB
— — — — 0.38 0.32 — — — —
TYP 0.1
— 8 800 0.47 0.37 5 5 300 300
MAX 2.0 1.0
— — — — — — — —
UNIT nA V pF nm A/W A/W ns ns MHz MHz
Ver.2005-01-20
-1-
0.95
0.95
...
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