BTB1424LN3

www.DataSheet4U.com CYStech Electronics Corp. Spec. No. : C817N3 Issued Date : 2003.06.17 Revised Date:2004.07.01 Page:1/4 Low VCE(sat) PNP Epitaxial Planar Transistor BTB1424LN3 Features Low VCE(sat), typically -0.3 V at IC / IB = -2A / -0.2A Excellent current gain characteristics Complementary to BTD2150LN3 Symbol BTB1424LN3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Note : Single Pulse Pw≦350µs, Duty≦2%. Symbol VCBO VCEO VEBO IC ICP Pd RθJA Tj Tstg Limit -40 -30 -5 -3 -7 (Note) 225 556 150 -55~+150 Unit V V V A A mW °C/W °C °C BTB1424LN3 CYStek Product Specification www.DataSheet4U.com CYStech Electronics Corp. Spec. No. : C817N3 Issued Date : 2003.06.17 Revised Date:2004.07.01 Page:2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min. -40 -30 -5 52 100 Typ. -0.3 -1 80 55 Max. -1 -1 -0.5 -2 500 Unit V V V µA µA V V MHz pF Test Conditions IC=-50µA, IE=0 IC=-1mA, IB=0 IE=-50µA, IC=0 VCB=-30V, IE=0 VEB=-3V, IC=0 IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A VCE=-2V, IC=-20mA VCE=-2V, IC=-1A VCE=-5V, IC=-0.1A, f=100MHz VCB=-10V, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE2 Rank Range Q 100~200 P 160~320 E 250~500 BTB...