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CYStech Electronics Corp.
Spec. No. : C816A3-H Issued Date : 2003.07.02
Revised Date : Page No. : ...
www.DataSheet4U.com
CYStech Electronics Corp.
Spec. No. : C816A3-H Issued Date : 2003.07.02
Revised Date : Page No. : 1/4
Low VCE(SAT)
PNP Epitaxial Planar
Transistor
BTB1426A3
Description
The BTB1426A3 is designed especially for use in strobo flash and medium power amplifier applications. High DC current gain and excellent hFE linearity. Low Saturation Voltage VCE(sat)=-0.5V(max)(IC=-2A, IB=-100mA).
Features
Symbol
BTB1426A3
Outline
TO-92
B：Base C：Collector E：Emitter
ECB
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulsed)(Note 1) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature
Note : Single pulse, Pw≤10ms, Duty Cycle≤2%.
Symbol VCBO VCEO VEBO IC ICP Pd RθJA Tj Tstg
Limits -20 -20 -6 -3 -5 (Note ) 750 167 150 -55~+150
Unit V V V A mW °C/W °C °C
BTB1426A3
CYStek Product Specification
www.DataSheet4U.com
CYStech Electronics Corp.
Spec. No. : C816A3-H Issued Date : 2003.07.02
Revised Date : Page No. : 2/4
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -20 -20 -6 120 Typ. 240 35 Max. -0.1 -0.1 -0.5 820 Unit V V V µA µA V MHz pF Test Conditions IC=-50µA IC=-1mA IE=-50µA VCB=-20V VEB=-5V IC=-2A, IB=-0.1A VCE=-2V, IC=-100mA VCE=-2V, IC=-500mA, f=100MHz VCB=-10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE
Rank Range Q 120~...
