P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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AP4953M
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Swi...
Description
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AP4953M
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching
D1 G2 S2 D2 D1 D2
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 53mΩ -5A
SO-8
S1
G1
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
G1
D1
D2
G2 S1 S2
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating - 30 ±20 -5 -4 - 20 2 0.016 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient
3
Value Max. 62.5
Unit ℃/W
Data and specifications subject to change without notice
20020513
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AP4953M
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2
Test Conditions VGS=0V, ID=-250uA
Min. Typ. Max. Units -30 -1 -0.1
53 90 -3 -1 -25 -
V V/℃ mΩ mΩ V S uA uA nC nC nC ns n...
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