APM2601

APM2601 www.DataSheet4U.com P-Channel Enhancement Mode MOSFET Features -20V/-3A , RDS(ON)=80mΩ(typ.) @ VGS=-4.5V RDS(ON)=110mΩ(typ.) @ VGS=-2.5V Pin Description D D G 1 2 3 6 5 4 D D S Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SOT-23-6 Package Top View of SOT-23-6 S Applications G Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. D D D D Ordering and Marking Information A P M 26 01 H andling C ode T em p. R an ge Package Code P-Channel MOSFET Package Code C : S O T -23-6 O peration Junction T em p. R ange C : -55 to 1 50° C H andling C ode T R : T ape & R eel A P M 2601 C : M 01X X - D ate C ode Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25°C unless otherwise noted) Rating -20 ±8 -3 -10 Unit V A Maximum Drain Current – Continuous Maximum Drain Current – Pulsed ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.1 - Jun., 2003 1 www.anpec.com.tw * Surface Mounted on FR4 Board, t ≤ 10 sec. APM2601 www.DataSheet4U.com Absolute Maximum Ratings (Cont.) Symbol PD Parameter Maximum Power Dissipation TA=25°C TA=100°C TJ TSTG RθjA Maximum Junction Temperature Storage Temperature Range Thermal Resistance – Junction to Ambient (T...