GT35J321

GT35J321 www.DataSheet4U.com TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT35J321 Fourth-generation IGBT Current Resonance Inverter Switching Applications z z z z z Enhancement mode High speed: tf = 0.19 μs (typ.) (IC = 50 A) Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 50 A) FRD included between emitter and collector Toshiba package name: TO-3P(N)IS Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector−emitter voltage Gate−emitter voltage Collector current (DC) @ Tc = 100°C @ Tc = 25°C Symbol VCES VGES IC ICP DC Pulse @ Tc = 100°C @ Tc = 25°C IF IFP PC Tj Tstg Rating 600 ±25 18 37 100 20 40 30 75 150 −55 to 150 Unit V V A A A 1. GATE 2. COLLECTOR 3. EMITTER Collector current (pulse) Diode forward current Collector power dissipation Junction temperature Storage temperature range JEDEC JEITA ⎯ ⎯ 2-16F1A W °C °C TOSHIBA Weight: 5.8 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate...